ICE15N65FP
N-Channel Enhancement Mode MOSFET
Features:
r Low DS(on)
Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability High Peak Current Capability Increased Transconductance Performance Optimized Design For High Performance Power Systems Maximum Ratings @ Tj = 25°C, Unless Otherwise Specified
Product Summary
ID V(BR)DSS rDS(ON)
Qg
TA = 25°C ID = 250uA VGS = 10V VDS = 480V
15A 650V 0.25Ω 59nC
Pin Description:
TO-220
G
Max Min Typ Typ
D
S
Symbol Parameter
Value
Unit Conditions
ID
ID, pulse EAS IAR
dv/dt
Continous Drain Current
Pulsed Drain Current Avalanche Energy, Single Pulse Avalanche Current, Repetitive MOSFET dv/dt Ruggedness
VGS
Ptot Tj, Tstg
Gate Source Voltage
Power Dissipation Operating and Storage Temperature Mounting Torque
15 45 460 7.5 50
±20 ±30
35
-55 to +150 50
A A mJ A V/ns
V
W °C Ncm
TC = 25°C TC = 25°C ID = 7.5A Limited by Tjmax VDS = 480V, ID = 15A, Tj = 125°C Static AC (f>Hz) TC = 25°C
M 2.5 screws
Symbol Parameter
Values Min Typ Max
Unit Conditions
Thermal Characteristics
RthJC Thermal Resistance, Junction to Case RthJA Thermal Resistance, Junction to Ambient Tsold Soldering Temperature, Wave Soldering Only
Allowed At Leads
- - 3.5 - - 80 - - 260
Electrical Characteristics @ Tj = 25°C, Unless Otherwise Specified
Static Characteristics
V(BR)DSS VGS(th) IDSS
Drain to Source Breakdown Voltage Gate Threshold Voltage
Zero Gate Voltage Drain Current
650 675 2.1 - 3.9 - 0.1 1 - - 100
IGSS RDS(on)
Gate Source Leakage Current Drain to Source On-State Resistance
- - 100 - 0.25 0.28 - 0.62 -
RGS Gate Resistance
- 4.7 -
°C/W °C
Leaded 1.6mm (0.063in.) from Case for 10s
V VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA
µA VDS = 650V, VGS = 0V, Tj = 25°C VDS = 650V, VGS = 0V, Tj = 150°C
nA VGS = ±20v, VDS = 0V Ω VGS = 10V, ID = 7.5A, Tj = 25°C
VGS = 10V, ID = 7.5A, Tj = 150°C Ω f = 1 MHz, open drain
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603 788920, Web: www.micross.com, Email:
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ICE15N65FP
Symbol Parameter
Dynamic Characteristics
Ciss Coss Crss gfs td(on) Tr td(off ) tf
Input Capacitance Output Capacitance Reverse Transfer Capacitance Transconductance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time
Gate Charge Characteristics
Qgs Qgd Qg Vplateau
Gate to Source Charge Gate to Drain Charge Gate Charge Total Gate Plateau Voltage
Reverse Diode
VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Irm Peak Reverse Recovery Current
Values Min Typ Max
Unit Conditions
- 1800 - 600 -5- 15 - 39 - 10 - 55 -6-
pF VGS = 0V, VDS = 25V, f = 1 MHz S VDS = >2*ID* RDS, ID = 7.5A
nS
VDS = 380V, VGS = 10V, ID = 15A, RG = 4Ω (External)
- 11 - 18 - 59 - 5.5 -
nC VDS = 480V, ID = 15A, VGS = 0 to 10V
V
- 0.9 1.2 - 400 -6- 35 -
V VGS = 0V, IS = IF ns
µC VRR = 480V, IS = IF, diF/dt = 100 A/µS A
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603 788920, Web: www.micross.com, Email:
[email protected] 2
ICE15N65FP
ID - Drain Current (A) ID - Drain Current (A)
Output Characteristics
Transfer Characterstics
45 45
40
VGS = 10V
40
35 7V 35 30 30
25 6V 25
20 20
15 15 5V
10 10 TJ = 150°C 5 5 25°C
0
0
36
9 12 15
VDS - Drain to Source Voltage (V)
0
02
4 6 8 10
VGS - Gate to Source Voltage (V)
RDS(on) - On State Resistance (mΩ) VGS - Gate to Source Voltage (V)
RDS(on) - On State Resistance (Normalized)
600 500 400 300 200 100
0 0
On State Resistance vs Drain Current
VGS = 10V
5 10 15 20 25 30 35 40 45 ID - Drain Current (A)
On Resistance vs Junction Temperature 4.0
3.5
3.0
VGS = 10V ID = 7.5A
2.5
2.0
1.5 1.0
0.5 0.0
-50
-25
0 25 50 75 100 125 150 TJ - Junction Temperature (°C)
10 9 8 7 6 5
4
3
2 1 00
Gate Charge VDS = 480V
ID = 15A
20 40 Qg - Total Gate Charge (nC)
60
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603 788920, Web: www.micross.com, Email:
[email protected] 3
ICE15N65FP
VGS(th) - Gate Threshold Voltage (Normalized)
1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4
-50
Gate Threshold Voltage vs. Junction Temperature ID = 250µA
-25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C)
Drain to Source Breakdown Voltage vs. Junction Temperature 1.2
1.1 ID = 1mA
1.0
0.9
ID - Drain Current (A)
C - Capacitance (pF)
100000 10000 1000
Capacitance Ciss
100 Coss
10
0 0
Crss
100 200 300 400 500 VDS- Drain to Source Voltage (V)
600
Maximum Rate Forward Biased Safe Operating Area
100 10
Single Pulse Tc = 25°C T = 150°C VGS = 10V
10us
1 0.1 RPaDSck(OaNg) LeimLimit it
Thermal Limit
100us
1ms 10ms DC
V(BR)DSS - Drain to Source Breakdown Voltage (Normalized)
0.8 -50 -25
0 25 50 75 100 125 150 TJ - Junction Temperature (°C)
0.01 1
10 100 VDS- Drain to Source Voltage (V)
1.00
Transient Thermal Response - Junction to Case
0.5
0.2 0.10 0.1
0.05
r(t) - Transit Thermal Resistance (Normalized)
0.02 0.01
Notes: PD.