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ICE15N65FP Dataheets PDF



Part Number ICE15N65FP
Manufacturers Micross Components
Logo Micross Components
Description N-Channel MOSFET
Datasheet ICE15N65FP DatasheetICE15N65FP Datasheet (PDF)

ICE15N65FP N-Channel Enhancement Mode MOSFET Features: r Low DS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability High Peak Current Capability Increased Transconductance Performance Optimized Design For High Performance Power Systems Maximum Ratings @ Tj = 25°C, Unless Otherwise Specified Product Summary ID V(BR)DSS rDS(ON) Qg TA = 25°C ID = 250uA VGS = 10V VDS = 480V 15A 650V 0.25Ω 59nC Pin Description: TO-220 G Max Min Typ T.

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ICE15N65FP N-Channel Enhancement Mode MOSFET Features: r Low DS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability High Peak Current Capability Increased Transconductance Performance Optimized Design For High Performance Power Systems Maximum Ratings @ Tj = 25°C, Unless Otherwise Specified Product Summary ID V(BR)DSS rDS(ON) Qg TA = 25°C ID = 250uA VGS = 10V VDS = 480V 15A 650V 0.25Ω 59nC Pin Description: TO-220 G Max Min Typ Typ D S Symbol Parameter Value Unit Conditions ID ID, pulse EAS IAR dv/dt Continous Drain Current Pulsed Drain Current Avalanche Energy, Single Pulse Avalanche Current, Repetitive MOSFET dv/dt Ruggedness VGS Ptot Tj, Tstg Gate Source Voltage Power Dissipation Operating and Storage Temperature Mounting Torque 15 45 460 7.5 50 ±20 ±30 35 -55 to +150 50 A A mJ A V/ns V W °C Ncm TC = 25°C TC = 25°C ID = 7.5A Limited by Tjmax VDS = 480V, ID = 15A, Tj = 125°C Static AC (f>Hz) TC = 25°C M 2.5 screws Symbol Parameter Values Min Typ Max Unit Conditions Thermal Characteristics RthJC Thermal Resistance, Junction to Case RthJA Thermal Resistance, Junction to Ambient Tsold Soldering Temperature, Wave Soldering Only Allowed At Leads - - 3.5 - - 80 - - 260 Electrical Characteristics @ Tj = 25°C, Unless Otherwise Specified Static Characteristics V(BR)DSS VGS(th) IDSS Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current 650 675 2.1 - 3.9 - 0.1 1 - - 100 IGSS RDS(on) Gate Source Leakage Current Drain to Source On-State Resistance - - 100 - 0.25 0.28 - 0.62 - RGS Gate Resistance - 4.7 - °C/W °C Leaded 1.6mm (0.063in.) from Case for 10s V VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA µA VDS = 650V, VGS = 0V, Tj = 25°C VDS = 650V, VGS = 0V, Tj = 150°C nA VGS = ±20v, VDS = 0V Ω VGS = 10V, ID = 7.5A, Tj = 25°C VGS = 10V, ID = 7.5A, Tj = 150°C Ω f = 1 MHz, open drain Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603 788920, Web: www.micross.com, Email: [email protected] 1 ICE15N65FP Symbol Parameter Dynamic Characteristics Ciss Coss Crss gfs td(on) Tr td(off ) tf Input Capacitance Output Capacitance Reverse Transfer Capacitance Transconductance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Gate Charge Characteristics Qgs Qgd Qg Vplateau Gate to Source Charge Gate to Drain Charge Gate Charge Total Gate Plateau Voltage Reverse Diode VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Irm Peak Reverse Recovery Current Values Min Typ Max Unit Conditions - 1800 - 600 -5- 15 - 39 - 10 - 55 -6- pF VGS = 0V, VDS = 25V, f = 1 MHz S VDS = >2*ID* RDS, ID = 7.5A nS VDS = 380V, VGS = 10V, ID = 15A, RG = 4Ω (External) - 11 - 18 - 59 - 5.5 - nC VDS = 480V, ID = 15A, VGS = 0 to 10V V - 0.9 1.2 - 400 -6- 35 - V VGS = 0V, IS = IF ns µC VRR = 480V, IS = IF, diF/dt = 100 A/µS A Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603 788920, Web: www.micross.com, Email: [email protected] 2 ICE15N65FP ID - Drain Current (A) ID - Drain Current (A) Output Characteristics Transfer Characterstics 45 45 40 VGS = 10V 40 35 7V 35 30 30 25 6V 25 20 20 15 15 5V 10 10 TJ = 150°C 5 5 25°C 0 0 36 9 12 15 VDS - Drain to Source Voltage (V) 0 02 4 6 8 10 VGS - Gate to Source Voltage (V) RDS(on) - On State Resistance (mΩ) VGS - Gate to Source Voltage (V) RDS(on) - On State Resistance (Normalized) 600 500 400 300 200 100 0 0 On State Resistance vs Drain Current VGS = 10V 5 10 15 20 25 30 35 40 45 ID - Drain Current (A) On Resistance vs Junction Temperature 4.0 3.5 3.0 VGS = 10V ID = 7.5A 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) 10 9 8 7 6 5 4 3 2 1 00 Gate Charge VDS = 480V ID = 15A 20 40 Qg - Total Gate Charge (nC) 60 Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603 788920, Web: www.micross.com, Email: [email protected] 3 ICE15N65FP VGS(th) - Gate Threshold Voltage (Normalized) 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 -50 Gate Threshold Voltage vs. Junction Temperature ID = 250µA -25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) Drain to Source Breakdown Voltage vs. Junction Temperature 1.2 1.1 ID = 1mA 1.0 0.9 ID - Drain Current (A) C - Capacitance (pF) 100000 10000 1000 Capacitance Ciss 100 Coss 10 0 0 Crss 100 200 300 400 500 VDS- Drain to Source Voltage (V) 600 Maximum Rate Forward Biased Safe Operating Area 100 10 Single Pulse Tc = 25°C T = 150°C VGS = 10V 10us 1 0.1 RPaDSck(OaNg) LeimLimit it Thermal Limit 100us 1ms 10ms DC V(BR)DSS - Drain to Source Breakdown Voltage (Normalized) 0.8 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) 0.01 1 10 100 VDS- Drain to Source Voltage (V) 1.00 Transient Thermal Response - Junction to Case 0.5 0.2 0.10 0.1 0.05 r(t) - Transit Thermal Resistance (Normalized) 0.02 0.01 Notes: PD.


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