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UT54ACS157 Dataheets PDF



Part Number UT54ACS157
Manufacturers Aeroflex Circuit Technology
Logo Aeroflex Circuit Technology
Description Quadruple 2 to 1 Multiplexers
Datasheet UT54ACS157 DatasheetUT54ACS157 Datasheet (PDF)

Standard Products UT54ACS157/UT54ACTS157 Quadruple 2 to 1 Multiplexers Datasheet November 2010 www.aeroflex.com/logic FEATURES ‰ 1.2μ CMOS - Latchup immune ‰ High speed ‰ Low power consumption ‰ Single 5 volt supply ‰ Available QML Q or V processes ‰ Flexible package - 16-pin DIP - 16-lead flatpack ‰ UT54ACS157 - SMD 5962-96552 ‰ UT54ACTS157 - SMD 5962-96553 DESCRIPTION The UT54ACS157 and the UT54ACTS157 are monolithic data selectors/multiplexers. A 4-bit word is selected from one of two sour.

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Standard Products UT54ACS157/UT54ACTS157 Quadruple 2 to 1 Multiplexers Datasheet November 2010 www.aeroflex.com/logic FEATURES ‰ 1.2μ CMOS - Latchup immune ‰ High speed ‰ Low power consumption ‰ Single 5 volt supply ‰ Available QML Q or V processes ‰ Flexible package - 16-pin DIP - 16-lead flatpack ‰ UT54ACS157 - SMD 5962-96552 ‰ UT54ACTS157 - SMD 5962-96553 DESCRIPTION The UT54ACS157 and the UT54ACTS157 are monolithic data selectors/multiplexers. A 4-bit word is selected from one of two sources and is routed to the four outputs. A separate strobe input, G, is provided. The devices are characterized over full military temperature range of -55°C to +125°C. FUNCTION TABLE INPUTS OUTPUT STROBE G SELECT A/B DATA AB Y HXXX L LLLXL L LHXH LHXL L L HXHH PINOUTS A/B A1 B1 Y1 A2 B2 Y2 VSS 16-Pin DIP Top View A/B 1 16 VDD A1 2 15 G B1 3 14 A4 Y1 4 13 B4 A2 5 12 Y4 B2 6 11 A3 Y2 7 10 B3 VSS 8 9 Y3 16-Lead Flatpack Top View 1 16 2 15 3 14 4 13 5 12 6 11 7 10 89 VDD G A4 B4 Y4 A3 B3 Y3 LOGIC SYMBOL (15) G (1) A/B (2) A1 (3) B1 (5) A2 (6) B2 (11) A3 (10) B3 (14) A4 (13) B4 EN G1 1 MUX 1 (4) Y1 (7) Y2 (9) Y3 (12) Y4 Note: 1. Logic symbol in accordance with ANSI/IEEE Std 91-1984 and IEC Publication 617-12. 1 LOGIC DIAGRAM 1A (2) 1B (3) 2A (5) 2B (6) 3A (11) 3B (10) 4A (14) 4B (13) STROBE G (15) SELECT A/B (1) (4) 1Y (7) 2Y (9) 3Y (12) 4Y 2 OPERATIONAL ENVIRONMENT1 PARAMETER Total Dose SEU Threshold 2 SEL Threshold Neutron Fluence LIMIT 1.0E6 80 120 1.0E14 UNITS rads(Si) MeV-cm2/mg MeV-cm2/mg n/cm2 Notes: 1. Logic will not latchup during radiation exposure within the limits defined in the table. 2. Device storage elements are immune to SEU affects. ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER LIMIT UNITS VDD Supply voltage -0.3 to 7.0 V VI/O TSTG TJ TLS ΘJC II Voltage any pin Storage Temperature range Maximum junction temperature Lead temperature (soldering 5 seconds) Thermal resistance junction to case DC input current -.3 to VDD +.3 -65 to +150 +175 +300 20 ±10 V °C °C °C °C/W mA PD Maximum power dissipation 1W Note: 1. Stresses outside the listed absolute maximum ratings may cause permanent damage to the device. This is a stress rating only, functional operation of the device at these or any other conditions beyond limits indicated in the operational sections is not recommended. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. RECOMMENDED OPERATING CONDITIONS SYMBOL VDD VIN TC PARAMETER Supply voltage Input voltage any pin Temperature range LIMIT 4.5 to 5.5 0 to VDD -55 to + 125 UNITS V V °C 3 DC ELECTRICAL CHARACTERISTICS 7 (VDD = 5.0V ±10%; VSS = 0V 6, -55°C < TC < +125°C); Unless otherwise noted, Tc is per the temperature range ordered. SYMBOL VIL VIH IIN VOL VOH IOS IOL IOH Ptotal PARAMETER Low-level input voltage 1 ACTS ACS High-level input voltage 1 ACTS ACS Input leakage current ACTS/ACS Low-level output voltage 3 ACTS ACS High-level output v.


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