AP90T03P-HF

Advanced Power Electronics Corp. AP90T03P-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower On- resistance ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free G D S Description AP90T03 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-220 package is widely preferred for all commercialindustrial through hole applications. The low thermal resistance and low package cost contribute to the worldwide popular package. BVDSS RDS(ON) ID 30V 4mΩ 75A G D S TO-220(P) Absolute Maximum Ratings@Tj=25o.C(unless otherwise specified) Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS ID@Tc=25℃ ID@Tc=100℃ IDM PD@Tc=25℃ Gate-Source Voltage Drain Current, VGS@10V3 Drain Current, VGS@10V Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor +20 V 75 A 63 A 350 A 96 W 0.7 W/℃ TSTG TJ Storage Temperature Range Operating Junction Temperature Range -55 to 150 -55 to 150 ℃ ℃ Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Value 1.3 62 Units ℃/W ℃/W Data and specifications subject to change without notice 1 201501135 AP90T03P-HF Electrical Characteristics@Tj=25oC(unless otherwise spec...