MMDFS6N303
Power MOSFET 6 Amps, 30 Volts
N−Channel SO−8, FETKYt
The FETKY product family incorporates low RDS(on), true...
MMDFS6N303
Power MOSFET 6 Amps, 30 Volts
N−Channel SO−8, FETKYt
The FETKY product family incorporates low RDS(on), true logic level MOSFETs packaged with industry leading, low forward drop, low leakage
Schottky Barrier rectifiers to offer high efficiency components in a space saving configuration. Independent pinouts for MOSFET and
Schottky die allow the flexibility to use a single component for switching and rectification functions in a wide variety of applications such as Buck Converter, Buck−Boost, Synchronous Rectification, Low Voltage Motor Control, and Load Management in Battery Packs, Chargers, Cell Phones and other Portable Products.
Features
Power MOSFET with Low VF Lower Component Placement and Inventory Costs along with
Board Space Savings
Logic Level Gate Drive — Can be Driven by Logic ICs Mounting Information for SO−8 Package Provided Applications Information Provided R2 Suffix for Tape and Reel (2500 units/13″ reel) Marking: 6N303
MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) (Note 1)
Rating Drain−to−Source Voltage
Drain−to−Gate Voltage (RGS = 1.0 MW) Gate−to−Source Voltage — Continuous
Drain Current (Note 2) − Continuous @ TA = 25°C − Single Pulse (tp v 10 ms)
Total Power Dissipation @ TA = 25°C (Note 2)
Symbol VDSS VDGR VGS
ID IDM PD
Value 30 30 "20
6.0 30 2.0
Unit Vdc Vdc Vdc
Adc Apk Watts
Single Pulse Drain−to−Source Avalanche Energy — Startin TJ = 25°C
VDD = 30 Vdc, VGS = 5.0 Vdc, VDS = 20 Vdc, IL = 9.0 Apk, L = 10 mH, RG = 2...