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EFC4618R-P

ON Semiconductor

Power MOSFET

EFC4618R-P Power MOSFET 24V, 6A, 23mΩ, Dual N-Channel www.onsemi.com Features • 2.5V Drive • Best Suited for LiB...


ON Semiconductor

EFC4618R-P

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Description
EFC4618R-P Power MOSFET 24V, 6A, 23mΩ, Dual N-Channel www.onsemi.com Features 2.5V Drive Best Suited for LiB Charging and Discharging Switch Common-drain Type ESD Diode - Protected Gate Pb-Free, Halogen Free and RoHS Compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Source-to-Source Voltage Gate-to-Source Voltage Source Current (DC) Source Current (Pulse) Total Dissipation Channel Temperature Storage Temperature Symbol VSSS VGSS IS ISP PT Tch Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (5000mm2×0.8mm) Ratings 24 ±12 6 60 1.6 150 --55 to +150 Unit V V A A W °C °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Package Dimensions unit : mm (typ) 7069-001 1.81 43 EFC4618R-P-TR Product & Package Information Package : EFCP JEITA, JEDEC :- Minimum Packing Quantity : 5,000 pcs./reel Packing Type : TR Marking 0.65 1.81 0.15 0.22 0.37 12 0.65 12 43 0.3 1 : Source1 2 : Gate1 3 : Gate2 4 : Source2 EFCP1818-4CC-037 ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2014 October 2014 - Rev. 2 1 TR Electrical Connection 1 Rg 2 Rg 3 Rg=200Ω 4 FT LOT No. Publication Order Number : EFC4618R-P/D EFC4618R-P Electrical Cha...




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