CPH6635

Ordering number : ENA2166 CPH6635 Power MOSFET 30V, 0.4A, 3.7Ω, –20V, –1.5A, 280mΩ, Complementary Dual CPH6 http://onsemi.com Features Excellent ON-resistance characteristic (P-Channel : RDS(on)1=215mΩ (typ.)) Optimal for load switch use (N-Channel for drive is embedded) N-Channel : 1.5V drive, P-Channel : 1.8V drive Halogen Free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) 1unit Storage Temperature Tstg This product is designed to “ESD immunity < 200V*”, so please take care when handling. * Machine Model N-channel P-channel 30 --20 ±10 ±10 0.4 --1.5 1.6 --6.0 0.8 150 --55 to +150 Unit V V A A W °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) 7018A-007 2.9 654 Ordering & Package Information Device Package Shipping memo CPH6635-TL-H CPH6 SC-74, SOT-26, SOT-45 3,000 pcs./reel Pb Free and Halogen Free 0.15 CPH6635-TL-H Packing Type: TL Marking 0.05 0.9 2.8 0.2 0.6 1.6 0.6 0.2 WW LOT No. 12 0.95 3 ...