AP05G120SW-HF

Advanced Power Electronics Corp. AP05G120SW-HF Halogen-Free Product N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD. Features ▼ High Speed Switching ▼ Low Saturation Voltage VCE(sat)=2.3V@IC=5A ▼ CO-PAK, IGBT With FRD ▼ RoHS Compliant & Halogen-Free G C E TO-3P Absolute Maximum Ratings Symbol Parameter VCES VGE IC@TC=25℃ IC@TC=100℃ ICM IF@TC=100℃ IFM PD@TC=25℃ TSTG TJ TL Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current1 Diode Forward Current Diode Pulse Forward Current Maximum Power Dissipation Storage Temperature Range Operating Junction Temperature Range Maximum Lead Temp. for Soldering Purposes , 1/8" from case for 5 seconds . VCES IC G Rating 1200 +30 21 10.5 42 6 40 125 -55 to 150 -55 to 150 300 1200V 10.5A C E Units V V A A A A A W ℃ ℃ ℃ Notes: 1.Pulse width limited by max. junction temperature. Thermal Data Symbol Parameter Rthj-c(IGBT) Thermal Resistance Junction-Case Rthj-c(Diode) Thermal Resistance Junction-Case Rthj-a Thermal Resistance Junction-Ambient Value 1 2 40 Units ℃/W ℃/W ℃/W Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units IGES Gate-to-Emitter Leakage Current VGE=+30V, VCE=0V -- ICES Collector-Emitter Leakage Current VCE=1200V, VGE=0V -- VCE(sat) Collector-Emitter Saturation Voltage VGE=15V, IC=5A - 2.3 VGE(th) Gate Threshold Voltage VCE=VGE, IC=250uA 3- Qg Total Gate Charge IC=5A - ...