SILICON GATE CMOS STATIC RAM
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TOSHIBA
TC551001BPL/BFL/BFTL/BTRL-70L/85L
SILICON GATE CMOS
131,072 WORD x 8 BIT STATIC RAM
Desc...
Description
www.DataSheet4U.com
TOSHIBA
TC551001BPL/BFL/BFTL/BTRL-70L/85L
SILICON GATE CMOS
131,072 WORD x 8 BIT STATIC RAM
Description
The TC551001BPL is a 1,048,576 bits static random access memory organized as 131,072 words by 8 bits using CMOS technology, and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low power features with an operating current of 5mA/MHz (typ.) and a minimum cycle time of 70ns. When CE1 is a logical high, or CE2 is low, the device is placed in a low power standby mode in which the standby current is 2µA typically. The TC551001BPL has three control inputs. Chip Enable inputs (CE1, CE2) allow for device selection and data retention control, while an Output Enable input (OE) provides fast memory access. The TC551001BPL is suitable for use in microprocessor application systems where high speed, low power, and battery backup are required.
The TC551001BPL is offered in a standard dual-in-line 32-pin plastic package, a small outline plastic package, and a thin small outline plastic package (forward, reverse type).
Features
Pin Connection (Top View)
Low power dissipation: 27.5mW/MHz (typ.)
Standby current:
4µA (max.) at Ta = 25°C
5V single power supply
Access time (max.)
TC551001BPL/BFL/BFTL/BTRL
-70L -85L
Access Time CE1 Access Time CE2 Access Time OE Access Time
70ns 70ns 70ns 35ns
85ns 85ns 85ns 45ns
Power down feature:
CE1, CE2
Data retention supply voltage: 2.0 ~ 5.5V
Inputs and ou...
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