MOSFET
Main Product Characteristics:
VDSS RDS(on)
-40V 11mΩ (typ.)
ID -40A
TO-252 (D-PAK)
Features and Benefits:
Advanc...
Description
Main Product Characteristics:
VDSS RDS(on)
-40V 11mΩ (typ.)
ID -40A
TO-252 (D-PAK)
Features and Benefits:
Advanced trench MOSFET process technology Special designed for PWM, load switching and
general purpose applications Ultra low on-resistance with low gate charge High Power and current handing capability 175℃ operating temperature
SSF4015
SSSSSFF344600113525D
D G
S
Marking and pin Schematic diagram Assignment
Description:
It utilizes the advanced trench processing techniques to achieve extremely low on resistance and low gate charge. These features combine to make this design an extremely efficient and reliable device for use in PWM, load switching and a wide variety of other applications.
Absolute max Rating:
Symbol ID @ TC = 25°C ID @ TC = 100°C IDM ISM PD @TC = 25°C VDS VGS EAS IAS TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V① Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Pulsed Source Current (Body Diode)② Power Dissipation③
Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=0.1mH Single Pulse Avalanche Current @ L=0.1mH Operating Junction and Storage Temperature Range
Max. -40 -28 -120 -120 75 -40 ± 20 40 28 -55 to + 175
Units
A
W V V mJ A °C
©Silikron Semiconductor CO.,LTD.
2013.07.19 www.silikron.com
Version : 1.3
page 1 of 6
SSF4015
Thermal Resistance
Symbol
RθJA RJC
Characterizes
Junction-to-ambient (t ≤ 10s) ④ Junction-to-Ambient (PCB mounted, steady-state) ④ Maximum Junction-to-C...
Similar Datasheet
- SSF4004 MOSFET - Silikron Semiconductor
- SSF4004S MOSFET - Silikron Semiconductor
- SSF4006 MOSFET - Silikron Semiconductor
- SSF4015 P-Channel MOSFET - GOOD-ARK
- SSF4015 MOSFET - Silikron Semiconductor
- SSF4031C1 MOSFET - Silikron Semiconductor
- SSF4032CH3 MOSFET - Silikron Semiconductor