SSF4607D

Main Product Characteristics: VDSS RDS(on) -30V 19mΩ(typ.) ID -25A ① TO-252 Features and Benefits:  Advanced trench MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150℃ operating temperature SSF4607D D G Marking and pin Assignment S Schematic diagram Description: It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. Absolute Max Rating: Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V(Silicon Limited) Continuous Drain Current, VGS @ 10V Pulsed Drain Current ② Power Dissipation Drain-Source Voltage Gate-to-Source Voltage Operating Junction and Storage Temperature Range Max. -25 ① -20 ① -60 41 -30 ± 20 -55 to + 150 Thermal Resistance Symbol RθJC RθJA Characterizes Junction-to-case③ Junction-to-ambient (t ≤ 10s) ④ Junction-to-Ambient (PCB mounted, steady-state) ④ Typ. — — — Max. 3 25 50 Units A W V V °C Units ℃/W ℃/W ℃/W ©Silikron Semiconductor CO.,LTD. 2012.03.22 www.silikron.com Version : 1.0 page 1 of 9 SSF4607D Electrical Characterizes @TA=25℃ unless otherwise specified Symb...