DESCRIPTION
The SSF4606 uses advanced trench technology MOSFET to provide excellent RDS(ON) and low gate charge. The complementary MOSFET may be used in power inverters, and other applications.
GENERAL FEATURES
●N-Channel VDS = 30V,ID = 6.9A RDS(ON) < 42mΩ @ VGS=4.5V RDS(ON) < 28mΩ @ VGS=10V
●P-Channel VDS = -30V,ID = -6A RDS(ON) < 58mΩ @ VGS=-4.5V RDS(ON) <...
