MOSFET
SSF4604
DESCRIPTION
The SSF4604 uses advanced trench technology MOSFET to provide excellent RDS(ON) and low gate charge...
Description
SSF4604
DESCRIPTION
The SSF4604 uses advanced trench technology MOSFET to provide excellent RDS(ON) and low gate charge. The complementary MOSFET may be used in power inverters, and other applications.
GENERAL FEATURES
●N-Channel VDS = 30V,ID = 6.9A RDS(ON) < 44mΩ @ VGS=4.5V RDS(ON) < 28mΩ @ VGS=10V
●P-Channel VDS = -30V,ID = -5A RDS(ON) < 87mΩ @ VGS=-4.5V RDS(ON) < 52mΩ @ VGS=-10V
●High Power and current handing capability ●Lead free product is acquired ●Surface Mount Package
N-channel P-channel Schematic diagram
D1 D1 D2 D2 8 7 65
4604
1 2 34 S1 G1 S2 G2
Marking and pin Assignment
SOP-8 top view
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
4604
SSF4604
SOP-8
Ø330mm
Tape width 12mm
Quantity 3000 units
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
TA=25℃ TA=70℃
VDS VGS
ID
Pulsed Drain Current (Note 1)
Maximum Power Dissipation
TA=25℃ TA=70℃
Operating Junction and Storage Temperature Range
IDM PD TJ,TSTG
N-Channel 30 ±20 6.9 6.0 30 2.0 1.35
-55 To 150
P-Channel -30 ±20 -5 -4.0 -20 2.0 1.44
-55 To 150
THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note2)
RθJA
N-Ch P-Ch
62.5 62.5
Unit V V A A W ℃
℃/W
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Min Typ Max Unit
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