MOSFET
Main Product Characteristics:
VDSS RDS(on)
ID
20V 14mΩ (typ.)
8A①
Features and Benefits:
TSSOP-8
Advanced MOSFET ...
Description
Main Product Characteristics:
VDSS RDS(on)
ID
20V 14mΩ (typ.)
8A①
Features and Benefits:
TSSOP-8
Advanced MOSFET process technology Ultra low on-resistance with low gate charge High Power and current handing capability 150℃ operating temperature G/S ESD protect 2KV (HBM)
SSF2814EH2
Marking and pin Assignment
Schematic diagram
Description:
The SSF2814EH2 series MOSFETs is a new technology, which combines an innovative technology and advance process. This new technology achieves low Rdson, energy saving, high reliability and uniformity, superior power density and space saving.
Absolute max Rating:
Symbol ID @ TC = 25°C ID @ TC = 100°C IDM
PD @TC = 25°C
VDS VGS TJ TSTG
Parameter Continuous Drain Current Continuous Drain Current Pulsed Drain Current ② Power Dissipation ③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Operating Junction and Storage Temperature Range
Thermal Resistance
Symbol RθJA
Characterizes Junction-to-ambient (t ≤ 10s) ④
Max. 8① 6.2 ① 25
2 0.5 20 ± 10 -55 to +150
Typ. —
Max. 90
Units
A
W W/°C
V V °C
Units ℃/W
©Silikron Semiconductor CO., LTD.
2013.09.20 www.silikron.com
Version: 1.0
page 1 of 7
SSF2814EH2
Electrical Characterizes @TA=25℃ unless otherwise specified
Symbol V(BR)DSS
RDS(on)
VGS(th) IDSS
IGSS
Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Parameter Drain-to-Source breakdown voltage
Static Drain-to-Source on-resistance
Gate threshold voltage Drain-to-Source leakage current
Gate-to-Source forw...
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