SSF2637E

SSF2637E DESCRIPTION The SSF2637E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -0.5V. GENERAL FEATURES ● VDS = -20V,ID =-5.4A RDS(ON) < 52mΩ @ VGS=-2.5V RDS(ON) < 43mΩ @ VGS=-4.5V ESD Rating：3000V HBM ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Schematic diagram D DD D 8 7 65 2464371E4 1 2 34 S SSG Marking and pin Assignment Application ●Battery protection ●Load switch ●Power management SOP-8 top view PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size 2637E SSF2637E SOP-8 Tape width Quantity ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous@ Current-Pulsed (Note 1) ID IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Limit -20 ±12 -5.4 -30 1.9 -55 To 150 Unit V V A A W ℃ THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 40 ℃/W ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter Symbol Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V ID=-250μA Min Typ Max Unit -20 V ©Silikron Semiconductor CO.,LTD. 1 http://www.silikron.com v1.0 SSF2637E Zero Gate Voltage Drain Current Gate-Body Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage IDSS IGSS VGS(th) ...