MOSFET
SSF4606
30V Complementary MOSFET
DESCRIPTION
The SSF4606 uses advanced trench technology MOSFET to provide excellent RD...
Description
SSF4606
30V Complementary MOSFET
DESCRIPTION
The SSF4606 uses advanced trench technology MOSFET to provide excellent RDS(ON) and low gate charge. The complementary MOSFET may be used in power inverters, and other applications.
GENERAL FEATURES
●N-Channel VDS = 30V,ID = 6.9A RDS(ON) < 42mΩ @ VGS=4.5V RDS(ON) < 28mΩ @ VGS=10V
●P-Channel VDS = -30V,ID = -6A RDS(ON) < 58mΩ @ VGS=-4.5V RDS(ON) < 35mΩ @ VGS=-10V
●High Power and current handing capability ●Lead free product ●Surface Mount Package
N-channel P-channel Schematic Diagram
Marking and pin Assignment SOP-8 Top View
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package Reel Size
4606
SSF4606
SOP-8
Ø330mm
Tape Width
12mm
Quantity
2500 units
ABSOLUTE MAXIMUM RATINGS (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage Continuous Drain Current
TA=25℃ TA=70℃
VGS ID
Pulsed Drain Current (Note 1) Maximum Power Dissipation
TA=25℃ TA=70℃
IDM PD
Operating Junction and Storage Temperature Range
TJ,TSTG
N-Channel
30 ±20 6.9 6.0 30 2.0 1.44 -55 To 150
P-Channel
-30 ±20 -6 -5.0 -30 2.0 1.44 -55 To 150
Unit
V V A
A W ℃
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note2)
N-Ch
62.5
RθJA
℃/W
P-Ch
62.5
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Min Typ Max Unit
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Rev.1.0
SSF4606
30V Complementary MOSFET
Drain-Source Breakdown Vo...
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