SSF6010A

SSF6010A Feathers:  Advanced trench process technology  avalanche energy, 100% test  Fully characterized avalanche voltage and current Description: The SSF6010A is a new generation of middle voltage and high current N–Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter repeatability. SSF6010A is assembled in high reliability and qualified assembly house. Application:  Power switching application ID =75A BV=60V Rdson=8mΩ (typ.) Absolute Maximum Ratings Parameter ID@Tc=25 ْC ID@Tc=100ْC IDM Continuous drain current,VGS@10V Continuous drain current,VGS@10V Pulsed drain current ① PD@TC=25ْC Power dissipation Linear derating factor VGS Gate-to-Source voltage EAS Single pulse avalanche energy ② EAR Repetitive avalanche energy TJ TSTG Operating Junction and Storage Temperature Range SSF6010A TOP View (D2PAK) Max. 75 45 300 144 0.74 ±20 220 TBD –55 to +175 Units A W W/ Cْ V mJ ْC Thermal Resistance Parameter RθJC RθJA Junction-to-case Junction-to-ambient Min. — — Typ. 1.04 — Max. — 62 Units ْC/W Electrical Characteristics @TJ=25 ْC (unless otherwise specified) Parameter BVDSS Drain-to-Source breakdown voltage RDS(on) Static Drain-to-Source on-resistance VGS(th) Gate threshold voltage gfs Forward transconductance IDSS Drain-to-Source leakage current Min. 60 — 2.0 — — — Typ. — 8 58 — — Max. — 10 4.0 — 2 10 Units V mΩ V S μA Gate-to-Source forward leakage IGSS Gate-to-Source rev...