MOSFET
Main Product Characteristics:
VDSS RDS(on)
ID
60V 67mΩ (typ.)
4A
Features and Benefits:
SOT-223
Advanced MOSFET p...
Description
Main Product Characteristics:
VDSS RDS(on)
ID
60V 67mΩ (typ.)
4A
Features and Benefits:
SOT-223
Advanced MOSFET process technology Special designed for DC-DC and DC-AC
converters, load switching and general purpose
applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175℃ operating temperature
SSF6072G5
6072SSF6072G5
Marking and pin Assignment
Schematic diagram
Description:
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in DC-DC and DC-AC converters and a wide variety of other applications.
Absolute max Rating:
Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS EAS IAS TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V① Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Power Dissipation③ Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=0.3mH Avalanche Current @ L=0.3mH Operating Junction and Storage Temperature Range
Max. 4 3 16 3.3 60
± 20 15 10 -55 to +175
Units
A
W V V mJ A °C
Thermal Resistance
Symbol RθJA
Characterizes Junction-to-ambient (t ≤ 10s) ④ Junction-to-Ambient (PCB mounted, steady-state) ④
Typ. — —
Max. 38 35
Units ℃/W ℃/W
©Silikron Semiconductor CO.,LTD.
2012.11.13 www.silikron.com
Version : 1.1
page 1 of 8
Electrical Characterizes @TA=...
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