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SSF26NS60 Dataheets PDF



Part Number SSF26NS60
Manufacturers GOOD-ARK
Logo GOOD-ARK
Description N-Channel MOSFET
Datasheet SSF26NS60 DatasheetSSF26NS60 Datasheet (PDF)

Main Product Characteristics VDSS 600V RDS(on) 0.135Ω(typ.) ID 20A Features and Benefits  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge  Low gate input resistance  Lead free product TO-220 SSF26NS60 600V N-Channel MOSFET Marking and Pin Assignment Schematic Diagram Description The SSF26NS60 series MOSFET is a new technology, which combines an innovative super junction technology and advance process. This new technology achieves.

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Main Product Characteristics VDSS 600V RDS(on) 0.135Ω(typ.) ID 20A Features and Benefits  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge  Low gate input resistance  Lead free product TO-220 SSF26NS60 600V N-Channel MOSFET Marking and Pin Assignment Schematic Diagram Description The SSF26NS60 series MOSFET is a new technology, which combines an innovative super junction technology and advance process. This new technology achieves low RDS (ON), energy saving, high reliability and uniformity, superior power density and space saving. Absolute Max Rating Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS EAS IAS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V① Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Power Dissipation③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=13.8mH Avalanche Current @ L=13.8mH Operating Junction and Storage Temperature Range Max. 20 13 80 208 1.66 600 ± 30 248 6 -55 to + 150 Units A W W/°C V V mJ A °C www.goodark.com Page 1 of 7 Rev.1.4 SSF26NS60 600V N-Channel MOSFET Thermal Resistance Symbol RθJC RθJA Characteristics Junction-to-case③ Junction-to-ambient (t ≤ 10s) ④ Typ. — — Max. 0.6 62 Units °C/W °C/W Electrical Characteristics @TA=25℃ unless otherwise specified Symbol V(BR)DSS RDS(on) VGS(th) IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-to-Source breakdown voltage Static Drain-to-Source on-resistance Gate threshold voltage Drain-to-Source leakage current Gate-to-Source forward leakage Total gate charge Gate-to-Source charge Gate-to-Drain("Miller") charge Turn-on delay time Rise time Turn-Off delay time Fall time Input capacitance Output capacitance Reverse transfer capacitance Min. 600 — — 2 — — — — — — — — — — — — — — — Typ. — 0.135 0.31 — 2.54 — — — — 52.1 11.2 24.9 15.2 18.2 46.0 15.7 1474 149 4 Max. — 0.165 — 4 — 1 50 100 -100 — — — — — — — — — — Units V Ω V μA nA nC nS pF Conditions VGS = 0V, ID = 1mA VGS=10V,ID = 10A TJ = 125°C VDS = VGS, ID = 250μA TJ = 125°C VDS = 600V,VGS = 0V TJ = 125°C VGS =30V VGS = -30V ID = 20A, VDS=480V, VGS = 10V VGS=10V, VDS =300V, RL=30Ω, RGEN=4.7Ω ID =10A VGS = 0V VDS = 50V ƒ = 1MHz Source-Drain Ratings and Characteristics Symbol IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. Typ. Max. — — 20 — — 80 — 0.88 1.3 — 370 — —5— Units A A V nS uC Conditions MOSFET symbol showing the integral reverse p-n junction diode. IS=20A, VGS=0V TJ = 25°C, IF =20A, di/dt = 100A/μs www.goodark.com Page 2 of 7 Rev.1.4 Test Circuits and Waveforms SSF26NS60 600V N-Channel MOSFET Switch Waveforms: Notes: ①The maximum current rating is limited by bond-wires. ②Repetitive rating; pulse width limited by max. junction temperature. ③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal resistance. ④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C ⑤These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. ⑥ The maximum current rating is limited by bond-wires. www.goodark.com Page 3 of 7 Rev.1.4 Typical Electrical and Thermal Characteristics SSF26NS60 600V N-Channel MOSFET Figure 1: Typical Output Characteristics Figure 2. Gate to source cut-off voltage Figure 3. Drain-to-Source Breakdown Voltage vs. Temperature Figure 4: Normalized On-Resistance Vs. Case Temperature www.goodark.com Page 4 of 7 Rev.1.4 SSF26NS60 600V N-Channel MOSFET Typical Electrical and Thermal Characteristics Figure 5. Maximum Drain Current Vs. Case Temperature Figure 6.Typical Capacitance Vs. Drain-to-Source Voltage www.goodark.com Page 5 of 7 Rev.1.4 Mechanical Data TO-220 PACKAGE OUTLINE DIMENSION_GN E SSF26NS60 600V N-Channel MOSFET A D D1 b ФP ФP1 b1 ϴ1 ϴ2 L D2 ϴ A1 ϴ4 Symbol A A1 b b1 c D D1 D2 E E1 ФP ФP1 e L ϴ1 ϴ2 ϴ3 ϴ4 e Dimension In Millimeters Min Nom Max - 1.300 - 2.200 2.400 2.600 - 1.270 - 1.270 1.370 1.470 - 0.500 - - 15.600 - - 28.700 - - 9.150 - 9.900 10.000 10.100 - 10.160 - - 3.600 - 1.500 2.54BSC 12.900 13.100 13.300 - 70 - 70 - - 30 - - 30 - cE Dimension In Inches Min Nom Max - 0.051 - 0.087 0.094 0.102 - 0.050 - 0.050 0.054 0.058 - 0.020 - - 0.614 - - 1.130 - - 0.360 - 0.390 0.394 0.398 - 0.400 - - 0.142 - 0.059 0.1BSC 0.508 0.516 0.524 - 70 - 70 - 50 70 90 10 30 50 www.goodark.com Page 6 of 7 Rev.1.4 Ordering and Marking Information SSF26NS60 600V N-Channel MOSFET Device Marking: SSF26NS60 Package (Available) TO-220 Operating Temperature Range C : -55 to 150 ºC Devices per Unit Package Type.


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