Document
Main Product Characteristics
VDSS
600V
RDS(on) 0.135Ω(typ.)
ID 20A
Features and Benefits
High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Lead free product
TO-220
SSF26NS60
600V N-Channel MOSFET
Marking and Pin Assignment
Schematic Diagram
Description
The SSF26NS60 series MOSFET is a new technology, which combines an innovative super junction technology and advance process. This new technology achieves low RDS (ON), energy saving, high reliability and uniformity, superior power density and space saving.
Absolute Max Rating
Symbol ID @ TC = 25°C ID @ TC = 100°C IDM
PD @TC = 25°C
VDS VGS EAS IAS TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V① Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Power Dissipation③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=13.8mH Avalanche Current @ L=13.8mH Operating Junction and Storage Temperature Range
Max. 20 13 80 208 1.66 600 ± 30 248 6
-55 to + 150
Units
A
W W/°C
V V mJ A °C
www.goodark.com
Page 1 of 7
Rev.1.4
SSF26NS60
600V N-Channel MOSFET
Thermal Resistance
Symbol RθJC RθJA
Characteristics Junction-to-case③ Junction-to-ambient (t ≤ 10s) ④
Typ. — —
Max. 0.6 62
Units °C/W °C/W
Electrical Characteristics @TA=25℃ unless otherwise specified
Symbol V(BR)DSS
RDS(on)
VGS(th)
IDSS
IGSS
Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Parameter Drain-to-Source breakdown voltage
Static Drain-to-Source on-resistance
Gate threshold voltage
Drain-to-Source leakage current
Gate-to-Source forward leakage
Total gate charge Gate-to-Source charge Gate-to-Drain("Miller") charge Turn-on delay time Rise time Turn-Off delay time Fall time Input capacitance Output capacitance Reverse transfer capacitance
Min. 600 — — 2 — — — — — — — — — — — — — — —
Typ. —
0.135 0.31 — 2.54 — — — — 52.1 11.2 24.9 15.2 18.2 46.0 15.7 1474 149
4
Max. —
0.165 — 4 — 1 50 100
-100 — — — — — — — — — —
Units V Ω V μA nA nC
nS
pF
Conditions VGS = 0V, ID = 1mA VGS=10V,ID = 10A TJ = 125°C VDS = VGS, ID = 250μA TJ = 125°C VDS = 600V,VGS = 0V TJ = 125°C VGS =30V VGS = -30V ID = 20A, VDS=480V, VGS = 10V VGS=10V, VDS =300V, RL=30Ω, RGEN=4.7Ω ID =10A VGS = 0V VDS = 50V ƒ = 1MHz
Source-Drain Ratings and Characteristics
Symbol IS
ISM VSD trr Qrr
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min. Typ. Max. — — 20
— — 80 — 0.88 1.3 — 370 — —5—
Units A
A V nS uC
Conditions MOSFET symbol showing the integral reverse p-n junction diode. IS=20A, VGS=0V TJ = 25°C, IF =20A, di/dt = 100A/μs
www.goodark.com
Page 2 of 7
Rev.1.4
Test Circuits and Waveforms
SSF26NS60
600V N-Channel MOSFET
Switch Waveforms:
Notes:
①The maximum current rating is limited by bond-wires. ②Repetitive rating; pulse width limited by max. junction temperature. ③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance. ④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C ⑤These curves are based on the junction-to-case thermal impedence which is measured with the
device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. ⑥ The maximum current rating is limited by bond-wires.
www.goodark.com
Page 3 of 7
Rev.1.4
Typical Electrical and Thermal Characteristics
SSF26NS60
600V N-Channel MOSFET
Figure 1: Typical Output Characteristics
Figure 2. Gate to source cut-off voltage
Figure 3. Drain-to-Source Breakdown Voltage vs. Temperature
Figure 4: Normalized On-Resistance Vs. Case Temperature
www.goodark.com
Page 4 of 7
Rev.1.4
SSF26NS60
600V N-Channel MOSFET
Typical Electrical and Thermal Characteristics
Figure 5. Maximum Drain Current Vs. Case Temperature
Figure 6.Typical Capacitance Vs. Drain-to-Source Voltage
www.goodark.com
Page 5 of 7
Rev.1.4
Mechanical Data
TO-220 PACKAGE OUTLINE DIMENSION_GN E
SSF26NS60
600V N-Channel MOSFET
A
D
D1 b
ФP ФP1
b1
ϴ1 ϴ2
L
D2 ϴ A1 ϴ4
Symbol
A A1 b b1 c D D1 D2 E E1 ФP ФP1 e L ϴ1 ϴ2 ϴ3 ϴ4
e
Dimension In Millimeters
Min Nom Max
- 1.300
-
2.200
2.400
2.600
- 1.270
-
1.270
1.370
1.470
- 0.500
-
- 15.600
-
- 28.700
-
- 9.150
-
9.900
10.000
10.100
- 10.160
-
- 3.600
-
1.500
2.54BSC
12.900
13.100
13.300
- 70 - 70 -
- 30 -
- 30 -
cE
Dimension In Inches
Min Nom Max
- 0.051
-
0.087
0.094
0.102
- 0.050
-
0.050
0.054
0.058
- 0.020
-
- 0.614
-
- 1.130
-
- 0.360
-
0.390
0.394
0.398
- 0.400
-
- 0.142
-
0.059
0.1BSC
0.508
0.516
0.524
- 70 - 70 -
50 70 90
10 30 50
www.goodark.com
Page 6 of 7
Rev.1.4
Ordering and Marking Information
SSF26NS60
600V N-Channel MOSFET
Device Marking: SSF26NS60
Package (Available) TO-220
Operating Temperature Range C : -55 to 150 ºC
Devices per Unit
Package Type.