SSF2641S

DESCRIPTION The SSF2641S uses advanced trench technology to provide excellent RDS(ON), low gate charge. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings. GENERAL FEATURES ●VDS = -20V,ID = -7.9A RDS(ON) < 70mΩ @ VGS=-2.5V RDS(ON) < 50mΩ @ VGS=-4.5V ● High Power and current handling capability ● Lead free product ● Surface Mount Package APPLICATIONS ●Battery protection ●Load switch ●Power management SSF2641S 20V P-Channel MOSFET D G S Schematic Diagram Marking and Pin Assignment SOP-8 Top View PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size SSF2641S SSF2641S SOP-8 Ø330mm Tape Width 8mm Quantity 2500 units ABSOLUTE MAXIMUM RATINGS (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous@ Current-Pulsed (Note 1) ID IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Limit -20 ±12 -7.9 -30 5 -55 To 150 Unit V V A A W ℃ THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 85 ℃/W www.goodark.com Page 1 of 4 Rev.1.0 ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter Symbol Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current BVDSS IDSS VGS=0V ID=-250μA VDS=-20V,VGS=0V Gate-Body Leakage Current ON CHARACTERISTICS (Note 3) IGSS VGS=±12V,VDS=0V Gate Threshold Volta...