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SSF2610E

Silikron Semiconductor

MOSFET


Description
DESCRIPTION The SSF2610E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. SSF2610E GENERAL FEATURES ● VDS = 20V,ID = 8A RDS(ON) < 23mΩ @ VGS=1.8V RDS(ON) < 18mΩ @ VGS=2.5V RDS(ON) < 14mΩ @ VGS=4.5V ESD Rating:2000V HBM ● High Power and current handing capability ● Lead free produ...



Silikron Semiconductor

SSF2610E

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