Document
Advanced Power Electronics Corp.
AP50T10GI-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement ▼ Lower Gate Charge ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free
G
D S
Description
AP50T10 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-220CFM package is widely preferred for all commercialindustrial through hole applications. The mold compound provides a high isolation voltage capability and low thermal resistance between the tab and the external heat-sink.
BVDSS RDS(ON) ID
100V 30mΩ 21.8A
GD S
TO-220CFM(I)
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ PD@TA=25℃ TSTG TJ
Drain-Source Voltage Gate-Source Voltage Drain Current, VGS @ 10V Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range
100 +20 21.8 13.8 80 31.3 1.92 -55 to 150 -55 to 150
V V A A A W W ℃ ℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value 4 65
Units ℃/W ℃/W
1 201501292
AP50T10GI-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS RDS(ON)
VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg
Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2
Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
VGS=0V, ID=250uA
VGS=10V, ID=16A
VGS=5V, ID=12A
VDS=VGS, ID=250uA VDS=10V, ID=16A VDS=80V, VGS=0V VGS= +20V, VDS=0V ID=16A VDS=80V VGS=10V VDS=50V ID=16A RG=1Ω VGS=10V VGS=0V
VDS=25V f=1.0MHz f=1.0MHz
100 --
-V 30 mΩ
- - 70 mΩ
1 - 3V
- 21 -
S
- - 25 uA
- - +100 nA
- 44 70 nC
- 7 - nC
- 20 - nC
- 10.5 - ns
- 26 - ns
- 28 - ns
- 10 - ns
- 1840 2940 pF
- 190 - pF
- 130 - pF
- 1.7 3.4 Ω
Source-Drain Diode
Symbol VSD trr Qrr
Parameter Forward On Voltage2 Reverse Recovery Time Reverse Recovery Charge
Test Conditions IS=16A, VGS=0V IS=10A, VGS=0V dI/dt=100A/µs
Min. Typ. Max. Units - - 1.3 V - 40 - ns - 64 - nC
Notes:
1.Pulse width limited by Max. junction temperature. 2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.
2
IS(A)
RDS(ON) (mΩ)
ID , Drain Current (A)
100
T C = 25 o C
10V 7.0V
80 6.0V
60
5.0V
40
V G = 4.0V
20
0 0 4 8 12
V DS , Drain-to-Source Voltage (V)
16
Fig 1. Typical Output Characteristics
60
I D =12A T C =25 o C
50
40
30
20 2 4 6 8 10
V GS Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
20
16
12
T j =150 o C
T j =25 o C
8
4
0 0 0.2 0.4 0.6 0.8 1 1.2 1.4
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of Reverse Diode
Normalized VGS(th)
Normalized RDS(ON)
ID , Drain Current (A)
AP50T10GI-HF
80
T C = 150 o C
60
40
20
10V 7.0V 6.0V
5.0V
V G = 4.0V
0 0 4 8 12 16 20
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.4
I D =16A V G =10V
2.0
1.6
1.2
0.8
0.4 -50 0 50 100
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance v.s. Junction Temperature
2
I D =250uA
1.6
150
1.2
0.8
0.4
0 -50 0 50 100
T j ,Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s. Junction Temperature
150
3
VGS , Gate to Source Voltage (V)
AP50T10GI-HF
12
I D =16A V DS =80V
10
8
6
4
2
0 0 10 20 30 40 50 60
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
C (pF)
f=1.0MHz
3000
C2000 iss
1000
C oss 0 C rss
1 5 9 13 17 21 25 29
V DS ,Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
ID (A)
1000
100 Operation in this area limited by RDS(ON)
10
100us
1
T c =25 o C Single Pulse
1ms 10ms 100ms DC
0.1 0.1 1 10 100
V DS , Drain-to-Source Voltage (V)
1000
Fig 9. Maximum Safe Operating Area
1 Duty factor=0.5
Normalized Thermal Response (Rthjc)
0.2
0.1 0.1
0.05
0.02 0.01
Single Pulse
PDM
t
T
Duty factor = t/T Peak Tj = PDM x Rthjc .