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AP50T10GI-HF Dataheets PDF



Part Number AP50T10GI-HF
Manufacturers Advanced Power Electronics
Logo Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet AP50T10GI-HF DatasheetAP50T10GI-HF Datasheet (PDF)

Advanced Power Electronics Corp. AP50T10GI-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Lower Gate Charge ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free G D S Description AP50T10 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power appli.

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Advanced Power Electronics Corp. AP50T10GI-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Lower Gate Charge ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free G D S Description AP50T10 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-220CFM package is widely preferred for all commercialindustrial through hole applications. The mold compound provides a high isolation voltage capability and low thermal resistance between the tab and the external heat-sink. BVDSS RDS(ON) ID 100V 30mΩ 21.8A GD S TO-220CFM(I) Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ PD@TA=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage Drain Current, VGS @ 10V Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range 100 +20 21.8 13.8 80 31.3 1.92 -55 to 150 -55 to 150 V V A A A W W ℃ ℃ Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice Value 4 65 Units ℃/W ℃/W 1 201501292 AP50T10GI-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VGS=0V, ID=250uA VGS=10V, ID=16A VGS=5V, ID=12A VDS=VGS, ID=250uA VDS=10V, ID=16A VDS=80V, VGS=0V VGS= +20V, VDS=0V ID=16A VDS=80V VGS=10V VDS=50V ID=16A RG=1Ω VGS=10V VGS=0V VDS=25V f=1.0MHz f=1.0MHz 100 -- -V 30 mΩ - - 70 mΩ 1 - 3V - 21 - S - - 25 uA - - +100 nA - 44 70 nC - 7 - nC - 20 - nC - 10.5 - ns - 26 - ns - 28 - ns - 10 - ns - 1840 2940 pF - 190 - pF - 130 - pF - 1.7 3.4 Ω Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage2 Reverse Recovery Time Reverse Recovery Charge Test Conditions IS=16A, VGS=0V IS=10A, VGS=0V dI/dt=100A/µs Min. Typ. Max. Units - - 1.3 V - 40 - ns - 64 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 IS(A) RDS(ON) (mΩ) ID , Drain Current (A) 100 T C = 25 o C 10V 7.0V 80 6.0V 60 5.0V 40 V G = 4.0V 20 0 0 4 8 12 V DS , Drain-to-Source Voltage (V) 16 Fig 1. Typical Output Characteristics 60 I D =12A T C =25 o C 50 40 30 20 2 4 6 8 10 V GS Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage 20 16 12 T j =150 o C T j =25 o C 8 4 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode Normalized VGS(th) Normalized RDS(ON) ID , Drain Current (A) AP50T10GI-HF 80 T C = 150 o C 60 40 20 10V 7.0V 6.0V 5.0V V G = 4.0V 0 0 4 8 12 16 20 V DS , Drain-to-Source Voltage (V) Fig 2. Typical Output Characteristics 2.4 I D =16A V G =10V 2.0 1.6 1.2 0.8 0.4 -50 0 50 100 T j , Junction Temperature ( o C) Fig 4. Normalized On-Resistance v.s. Junction Temperature 2 I D =250uA 1.6 150 1.2 0.8 0.4 0 -50 0 50 100 T j ,Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 150 3 VGS , Gate to Source Voltage (V) AP50T10GI-HF 12 I D =16A V DS =80V 10 8 6 4 2 0 0 10 20 30 40 50 60 Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics C (pF) f=1.0MHz 3000 C2000 iss 1000 C oss 0 C rss 1 5 9 13 17 21 25 29 V DS ,Drain-to-Source Voltage (V) Fig 8. Typical Capacitance Characteristics ID (A) 1000 100 Operation in this area limited by RDS(ON) 10 100us 1 T c =25 o C Single Pulse 1ms 10ms 100ms DC 0.1 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) 1000 Fig 9. Maximum Safe Operating Area 1 Duty factor=0.5 Normalized Thermal Response (Rthjc) 0.2 0.1 0.1 0.05 0.02 0.01 Single Pulse PDM t T Duty factor = t/T Peak Tj = PDM x Rthjc .


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