AP28G45GEO-HF

Advanced Power Electronics Corp. ▼ High Input Impedance ▼ High Peak Current Capability ▼ Low Gate Drive ▼ Strobe Flash Applications AP28G45GEO-HF RoHS-compliant Product N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR E E E G TSSOP-8 C C C C VCE ICP G 400V 150A C E Absolute Maximum Ratings Symbol Parameter VCE VGE ICP PD@TA=25℃1 TSTG TJ Collector-Emitter Voltage Peak Gate-Emitter Voltage Pulsed Collector Current, VGE @ 2.5V Maximum Power Dissipation Storage Temperature Range Operating Junction Temperature Range Rating 400 ±6 150 1 -55 to 150 150 Units V V A W ℃ ℃ Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. IGES Gate-Emitter Leakage Current VGE=± 6V, VCE=0V ICES Collector-Emitter Leakage Current VCE=400V, VGE=0V --- VCE(sat) Collector-Emitter Saturation Voltage VGE=2.5V, ICP=150A (Pulsed) - 5.2 VGE(th) Qg Gate Threshold Voltage Total Gate Charge VCE=VGE, IC=250uA IC=40A 0.3 - 76 Qge Gate-Emitter Charge Qgc Gate-Collector Charge td(on) Turn-on Delay Time VCE=200V VGE=4V VCC=320V -4 - 26 - 220 tr Rise Time td(off) Turn-off Delay Time IC=160A RG=10Ω - 800 - 1.6 tf Fall Time Cies Input Capacitance Coes Output Capacitance VGE=4V VGE=0V VCE=30V - 1.5 - 4485 - 44 Cres RthJA1 Reverse Transfer Capacitance f=1.0MHz Thermal Resistance Junction-Ambient - 40 -- Max. ±10 10 9 1.2 130 8240 125 Units uA uA V V nC nC nC ns ns µs µs pF pF pF ℃/W Notes: 1.Surface mounted on 1 in2 copper pad...