DatasheetsPDF.com

AP28G45EM

Advanced Power Electronics
Part Number AP28G45EM
Manufacturer Advanced Power Electronics
Description N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
Published Sep 22, 2016
Detailed Description AP28G45EM Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR ▼ High Input Impedance ▼ High ...
Datasheet PDF File AP28G45EM PDF File

AP28G45EM
AP28G45EM

Overview
AP28G45EM Advanced Power Electronics Corp.
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR ▼ High Input Impedance ▼ High Pick Current Capability ▼ 3.
3V Gate Drive ▼ Strobe Flash Applications C C C C SO-8 G E E E VCE ICP G 450V 130A C E Absolute Maximum Ratings Symbol Parameter VCE VGE IGEP ICP PD@TC=25℃1 TSTG TJ Collector-Emitter Voltage Gate-Emitter Voltage Pulsed Gate-Emitter Voltage Pulsed Collector Current, VGE @ 3.
3V Maximum Power Dissipation Storage Temperature Range Operating Junction Temperature Range Rating 450 ±6 ±8 130 2.
5 -55 to 150 -55 to 150 Units V V V A W ℃ ℃ Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min.
...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)