N-Channel MOSFET
DESCRIPTION
The SSF3606 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is...
Description
DESCRIPTION
The SSF3606 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications.
GENERAL FEATURES
● VDS = 30V,ID =15A RDS(ON) < 8.5mΩ @ VGS=4.5V RDS(ON) < 6mΩ @ VGS=10V
● High Power and current handing capability ● Lead free product ● Surface Mount Package
SSF3606
30V N-Channel MOSFET
D G
S Schematic Diagram
Marking and Pin Assignment
APPLICATIONS
●PWM applications ●Load switch ●Power management
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
SSF3606
SSF3606
SOP-8
Ø330mm
SOP-8 Top View
Tape Width 12mm
Quantity 2500 units
ABSOLUTE MAXIMUM RATINGS (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous@ Current-Pulsed (Note 1)
ID(25℃) ID(70℃)
IDM
Maximum Power Dissipation Operating Junction and Storage Temperature Range
PD TJ,TSTG
Limit
30 ±20 15 12.5 60
2 -55 To 150
Unit
V V A A A W ℃
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
62.5 ℃/W
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
Min Typ Max Unit
30 V
www.goodark.com
Page 1 of 6
Rev.1.0
SSF3606
30V N-Channel MOSFET
Zero Gate Voltage Drain Current Gate-Body Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage
Drain-Source On-...
Similar Datasheet