Document
Main Product Characteristics
VDSS
30V
RDS(on) 26.5mohm(typ.)
ID 5.8A ①
SOT23
Features and Benefits
Advanced trench MOSFET process technology Special designed for PWM, load switching and
general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150℃ operating temperature Lead free product
SSF3324
30V N-Channel MOSFET
Marking and Pin Assignment
Schematic Diagram
Description
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.
Absolute Max Rating
Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current ② Power Dissipation Drain-Source Voltage Gate-to-Source Voltage Operating Junction and Storage Temperature Range
Max. 5.8 ① 4.2 ①
23 1.4 30 ± 12 -55 to + 150
Units
A
W V V °C
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Page 1 of 8
Rev.1.1
Thermal Resistance
Symbol RθJA
Characteristics Junction-to-ambient (t ≤ 10s) ③
SSF3324
30V N-Channel MOSFET
Typ. —
Max. 90
Units ℃/W
Electrical Characteristics @TA=25℃ unless otherwise specified
Symbol Parameter V(BR)DSS Drain-to-Source breakdown voltage
RDS(on) Static Drain-to-Source on-resistance
RDS(on) Static Drain-to-Source on-resistance
RDS(on) Static Drain-to-Source on-resistance
VGS(th) Gate threshold voltage
IDSS Drain-to-Source leakage current
IGSS Gate-to-Source forward leakage
Qg Total gate charge
Qgs Gate-to-Source charge
Qgd Gate-to-Drain("Miller") charge
td(on)
Turn-on delay time
tr Rise time
td(off)
Turn-Off delay time
tf Fall time
Ciss Input capacitance
Coss Output capacitance
Crss Reverse transfer capacitance
Min. 30 — — — — — — 0.7 — — — — — — — — — — — — — — —
Typ. — 26.5 43.7 31.1 50.2 44.9 62.1 — 0.63 — — — — 10 2 3 3 5 26 4
1245 85 70
Max. — 35 — 40 — 50 — 1.4 — 1 50 100
-100 — — — — — — — — — —
Units V mΩ mΩ mΩ V μA nA
nC
Conditions VGS = 0V, ID = 250μA VGS=4.5V,ID = 2A TJ = 125℃ VGS=2.5V,ID=1.5A TJ = 125℃ VGS=1.8V,ID=1A TJ = 125℃ VDS = VGS, ID = 250μA TJ = 125℃ VDS = 24V,VGS = 0V TJ = 125°C VGS =12V VGS = -12V ID = 5.8A, VDS=15V, VGS = 4.5V
VGS=10V, VDS =15V, ns
RGEN=3Ω,
VGS = 0V, pF VDS =15V,
ƒ = 1MHz
Source-Drain Ratings and Characteristics
Symbol IS
ISM VSD
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage
Min. —
— —
Typ. —
— 0.72
Max. 5.8 ①
23 1.2
Units A
A V
Conditions MOSFET symbol showing the integral reverse p-n junction diode. IS=1A, VGS=0V
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Page 2 of 8
Rev.1.1
Test Circuits and Waveforms
SSF3324
30V N-Channel MOSFET
Switch Waveforms:
Notes:
①Calculated continuous current based on maximum allowable junction temperature. ②Repetitive rating; pulse width limited by max junction temperature. ③The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C ④These curves are based on the junction-to-case thermal impedence which is measured with the
device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C.
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Page 3 of 8
Rev.1.1
Typical Electrical and Thermal Characteristics
SSF3324
30V N-Channel MOSFET
Figure 1: Typical Output Characteristics
Figure 2. Typical Transfer Characteristics
Figure 3. Gate to source cut-off voltage
Figure 4: Drain-to-Source Breakdown Voltage vs. Temperature
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Page 4 of 8
Rev.1.1
Typical Electrical and Thermal Characteristics
SSF3324
30V N-Channel MOSFET
Figure 5. Normalized On-Resistance Vs. Case Temperature
Figure 6. Maximum Drain Current Vs. Case Temperature
Figure 7. Typical Capacitance Vs. Drain-to-Source Voltage
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Page 5 of 8
Rev.1.1
SSF3324
30V N-Channel MOSFET
Figure8. Normalized Maximum Transient Thermal Impedance
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Page 6 of 8
Rev.1.1
Mechanical Data
SOT-23 PACKAGE OUTLINE DIMENSION
SSF3324
30V N-Channel MOSFET
Symb ol
A A1 A2 b c D E E1 e e1 L L1 θ
Dimension In M illimeters
Min Max
0.900
1.150
0.000 0.900
0.100 1.050
0.300 0.080
0.500 0.150
2.800
3.000
1.200
1.400
2.250
2.550
0.95TYP
1.800
2.000
0.55REF
0.300
0.500
00 80
Dimension In Inches
Min Max
0 .0 35
0.045
0 .0 00 0 .0 35
0.004 0.041
0 .0 12 0 .0 03
0.020 0.006
0 .1 10
0.118
0 .0 47
0.055
0 .0 89
0.100
0.03 7T YP
0 .0 71
0.079
0 .02 2R EF
0 .0 12
0.020
00 80
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Page 7 of 8
Rev.1.1
Ordering and Marking Information
SSF3324
30V N-Channel MOSFET
Device Marking: 3324
Package (Available) SOT23
Operating Temperature Range C : -55 to 150 ºC
Devices per Unit Package Units/ Tubes/Inner Type Tube Box
SOT23 3000
10
Units/Inner Box
30000
Inner
Units/Carton
Boxes/Car.