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SSF3324 Dataheets PDF



Part Number SSF3324
Manufacturers GOOD-ARK
Logo GOOD-ARK
Description N-Channel MOSFET
Datasheet SSF3324 DatasheetSSF3324 Datasheet (PDF)

Main Product Characteristics VDSS 30V RDS(on) 26.5mohm(typ.) ID 5.8A ① SOT23 Features and Benefits  Advanced trench MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150℃ operating temperature  Lead free product SSF3324 30V N-Channel MOSFET Marking and Pin Assignment Schematic Diagram Description It utilizes the latest trench processing techn.

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Main Product Characteristics VDSS 30V RDS(on) 26.5mohm(typ.) ID 5.8A ① SOT23 Features and Benefits  Advanced trench MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150℃ operating temperature  Lead free product SSF3324 30V N-Channel MOSFET Marking and Pin Assignment Schematic Diagram Description It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. Absolute Max Rating Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current ② Power Dissipation Drain-Source Voltage Gate-to-Source Voltage Operating Junction and Storage Temperature Range Max. 5.8 ① 4.2 ① 23 1.4 30 ± 12 -55 to + 150 Units A W V V °C www.goodark.com Page 1 of 8 Rev.1.1 Thermal Resistance Symbol RθJA Characteristics Junction-to-ambient (t ≤ 10s) ③ SSF3324 30V N-Channel MOSFET Typ. — Max. 90 Units ℃/W Electrical Characteristics @TA=25℃ unless otherwise specified Symbol Parameter V(BR)DSS Drain-to-Source breakdown voltage RDS(on) Static Drain-to-Source on-resistance RDS(on) Static Drain-to-Source on-resistance RDS(on) Static Drain-to-Source on-resistance VGS(th) Gate threshold voltage IDSS Drain-to-Source leakage current IGSS Gate-to-Source forward leakage Qg Total gate charge Qgs Gate-to-Source charge Qgd Gate-to-Drain("Miller") charge td(on) Turn-on delay time tr Rise time td(off) Turn-Off delay time tf Fall time Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Min. 30 — — — — — — 0.7 — — — — — — — — — — — — — — — Typ. — 26.5 43.7 31.1 50.2 44.9 62.1 — 0.63 — — — — 10 2 3 3 5 26 4 1245 85 70 Max. — 35 — 40 — 50 — 1.4 — 1 50 100 -100 — — — — — — — — — — Units V mΩ mΩ mΩ V μA nA nC Conditions VGS = 0V, ID = 250μA VGS=4.5V,ID = 2A TJ = 125℃ VGS=2.5V,ID=1.5A TJ = 125℃ VGS=1.8V,ID=1A TJ = 125℃ VDS = VGS, ID = 250μA TJ = 125℃ VDS = 24V,VGS = 0V TJ = 125°C VGS =12V VGS = -12V ID = 5.8A, VDS=15V, VGS = 4.5V VGS=10V, VDS =15V, ns RGEN=3Ω, VGS = 0V, pF VDS =15V, ƒ = 1MHz Source-Drain Ratings and Characteristics Symbol IS ISM VSD Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Min. — — — Typ. — — 0.72 Max. 5.8 ① 23 1.2 Units A A V Conditions MOSFET symbol showing the integral reverse p-n junction diode. IS=1A, VGS=0V www.goodark.com Page 2 of 8 Rev.1.1 Test Circuits and Waveforms SSF3324 30V N-Channel MOSFET Switch Waveforms: Notes: ①Calculated continuous current based on maximum allowable junction temperature. ②Repetitive rating; pulse width limited by max junction temperature. ③The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C ④These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. www.goodark.com Page 3 of 8 Rev.1.1 Typical Electrical and Thermal Characteristics SSF3324 30V N-Channel MOSFET Figure 1: Typical Output Characteristics Figure 2. Typical Transfer Characteristics Figure 3. Gate to source cut-off voltage Figure 4: Drain-to-Source Breakdown Voltage vs. Temperature www.goodark.com Page 4 of 8 Rev.1.1 Typical Electrical and Thermal Characteristics SSF3324 30V N-Channel MOSFET Figure 5. Normalized On-Resistance Vs. Case Temperature Figure 6. Maximum Drain Current Vs. Case Temperature Figure 7. Typical Capacitance Vs. Drain-to-Source Voltage www.goodark.com Page 5 of 8 Rev.1.1 SSF3324 30V N-Channel MOSFET Figure8. Normalized Maximum Transient Thermal Impedance www.goodark.com Page 6 of 8 Rev.1.1 Mechanical Data SOT-23 PACKAGE OUTLINE DIMENSION SSF3324 30V N-Channel MOSFET Symb ol A A1 A2 b c D E E1 e e1 L L1 θ Dimension In M illimeters Min Max 0.900 1.150 0.000 0.900 0.100 1.050 0.300 0.080 0.500 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.95TYP 1.800 2.000 0.55REF 0.300 0.500 00 80 Dimension In Inches Min Max 0 .0 35 0.045 0 .0 00 0 .0 35 0.004 0.041 0 .0 12 0 .0 03 0.020 0.006 0 .1 10 0.118 0 .0 47 0.055 0 .0 89 0.100 0.03 7T YP 0 .0 71 0.079 0 .02 2R EF 0 .0 12 0.020 00 80 www.goodark.com Page 7 of 8 Rev.1.1 Ordering and Marking Information SSF3324 30V N-Channel MOSFET Device Marking: 3324 Package (Available) SOT23 Operating Temperature Range C : -55 to 150 ºC Devices per Unit Package Units/ Tubes/Inner Type Tube Box SOT23 3000 10 Units/Inner Box 30000 Inner Units/Carton Boxes/Car.


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