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SSF3322

Silikron Semiconductor

MOSFET

SSF3322 DESCRIPTION The SSF3322 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This ...


Silikron Semiconductor

SSF3322

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Description
SSF3322 DESCRIPTION The SSF3322 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS = 30V,ID =5.8A RDS(ON) < 43mΩ @ VGS=4.5V RDS(ON) < 28mΩ @ VGS=10V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package D G S Schematic diagram Marking and pin Assignment Application ●PWM applications ●Load switch ●Power management SOT-23 top view PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size 3322 SSF3322 SOT-23 Ø330mm Tape width 12mm Quantity 3000 units ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous@ Current-Pulsed (Note 1) ID(25℃) ID(70℃) Maximum Power Dissipation IDM PD Operating Junction and Storage Temperature Range TJ,TSTG Limit 30 ±20 5.8 4.9 20 1.4 -55 To 150 Unit V V A A A W ℃ THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 90 ℃/W ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter Symbol Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA Min Typ Max 30 Unit V ©Silikron Semiconductor CO.,LTD. 1 http://www.silikron.com v1.0 SSF3322 Zero Gate Voltage Drain Current Gate-Body Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Drain-Source On-...




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