SSTS20120/SSTS20120F
Main Product C...
SSTS20120/SSTS20120F
Main Product Characteristics:
IF VRRM Tj(max) Vf(max)
20A 120V 150℃ 0.9V
Features and Benefits:
High Junction Temperature High ESD Protection High Forward & Reverse Surge capability
TO220 SSTS20120
TO220F SSTS20120F
Schematic Diagram
Description:
Schottky Barrier Rectifier designed for high frequency switch model power supplies such as adaptors and DC/DC convertors; this product special design for high forward and reverse surge capability
Absolute Rating:
Symbol
Characterizes
VRRM VR(RMS)
IF(AV)
Peak Repetitive Reverse Voltage RMS Reverse Voltage Average Forward Current
IFSM Non Repetitive Surge Forward Current(tp=8.3ms sinusoidal)
IRRM Peak Repetitive Reverse Surge Current(Tp=2us) TJ Maximum operation Junction Temperature Range Tstg Storage Temperature Range
Value 120 84 20 200
2 -55~150 -55~150
Unit V V A A A ℃
℃
Thermal Resistance
Symbol
Characterizes
RθJC RθJC
Maximum Thermal Resistance Junction To Case(per leg)
TO220 TO220F
Electrical Characterizes @TA=25℃ unless otherwise specified
Symbol
Characterizes
Min Typ Max Unit
VR
Reverse Breakdown Voltage
120
V 0.7
VF Forward Voltage Drop
0.9 V 0.8
IR Leakage Current
0.2 20
mA
Value 2 4
Unit ℃/W ℃/W
Test Condition IR=0.5mA IF=10A, TJ=25℃ IF=20A, TJ=25℃ IF=20A, TJ=125℃ VR=120V, TJ=25℃ VR=120V, TJ=125℃
©Silikron Semiconductor CO., LTD.
2012.2.17 www.silikron.com
Version: 1.0
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