N-Channel enhancement mode power field effect transistors
Description
Main Product Characteristics
VDSS RDS(on)
100V 3.0mΩ (typ.)
ID 180A ①
Features and Benefits
TO-263-7L
Advanced Process Technology Special designed for PWM, load switching and
general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175℃ operating temperature
SSS1004A7
1, Gate 2~3,5~7...
