Document
Main Product Characteristics:
VDSS
75V
RDS(on) 7.2mohm(typ.)
ID 75A ①
Features and Benefits:
Advanced Process Technology Special designed for PWM, load switching and
general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175℃ operating temperature
TO220
SSPL7509
Marking and pin Assignment
Schematic diagram
Description:
These N-Channel enhancement mode power field effect transistors are produced using silikron proprietary MOSFET technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies
Absolute max Rating:
Symbol ID @ TC = 25°C ID @ TC = 100°C IDM
PD @TC = 25°C
VDS VGS EAS IAS TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current ② Power Dissipation ③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=0.97mH Avalanche Current @ L=0.97mH Operating Junction and Storage Temperature Range
Max. 75 ① 70 ① 300 250 1.67
75 ±20 1467 55 -55 to +175
Units
A
W W/°C
V V mJ A °C
©Silikron Semiconductor CO.,LTD.
2011.11.22 www.silikron.com
Version : 1.0
page 1 of 8
SSPL7509
Thermal Resistance
Symbol RθJC
RθJA
Characterizes Junction-to-case ③ Junction-to-ambient (t ≤ 10s) ④ Junction-to-Ambient (PCB mounted, steady-state) ④
Typ. — — —
Max. 0.6 62 40
Units ℃/W ℃/W ℃/W
Electrical Characterizes @TA=25℃ unless otherwise specified
Symbol V(BR)DSS
RDS(on)
VGS(th)
IDSS
IGSS
Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Parameter Drain-to-Source breakdown voltage
Static Drain-to-Source on-resistance
Gate threshold voltage
Drain-to-Source leakage current
Gate-to-Source forward leakage
Total gate charge Gate-to-Source charge Gate-to-Drain("Miller") charge Turn-on delay time Rise time Turn-Off delay time Fall time Input capacitance Output capacitance Reverse transfer capacitance
Min.
75 — —
2 — — — —
-100 — — — — — — — — — —
Typ. — 7.2 12.8 — 2.29 — — — — 88.4 25.3 33.7 21.1 76.9 56.7 57.2
7796 909 74
Max. — 9 — 4 — 1 50 100 — — — — — — — — — — —
Units V mΩ V μA nA nC
nS
pF
Conditions VGS = 0V, ID = 250μA VGS=10V,ID =37.5A TJ = 125°C VDS = VGS, ID = 250μA TJ = 125°C VDS =75V,VGS = 0V TJ = 125°C VGS =20V VGS = -20V ID = 75A, VDS=60V, VGS = 10V
VGS=10V, VDD =37.5V, RL=1Ω, RGEN=4.7Ω ID =37.5A
VGS = 0V VDS = 25V ƒ =1MHz
Source-Drain Ratings and Characteristics
Symbol IS
ISM VSD trr Qrr
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min. —
Typ. —
Max. 75 ①
— — 300
— 0.91 1.5 — 54.7 — — 124.1 —
Units A
A V nS nC
Conditions MOSFET symbol showing the integral reverse p-n junction diode. IS=75A, VGS=0V, TJ = 25°C TJ = 25°C, IF =75A, di/dt = 100A/μs
©Silikron Semiconductor CO.,LTD.
2011.11.22 www.silikron.com
Version : 1.0
page 2 of 8
Test circuits and Waveforms
SSPL7509
Switch Waveforms:
Notes:
①Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A.
②Repetitive rating; pulse width limited by max. junction temperature. ③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance. ④The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C ⑤These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C.
©Silikron Semiconductor CO.,LTD.
2011.11.22 www.silikron.com
Version : 1.0
page 3 of 8
Typical electrical and thermal characteristics
SSPL7509
Figure 1: Typical Output Characteristics
Figure 2. Gate to source cut-off voltage
Figure 3. Drain-to-Source Breakdown Voltage vs. Temperature
Figure 4: Normalized On-Resistance Vs. Case Temperature
©Silikron Semiconductor CO.,LTD.
2011.11.22 www.silikron.com
Version : 1.0
page 4 of 8
Typical electrical and thermal characteristics
SSPL7509
Figure 5. Maximum Drain Current Vs. Case Temperature
Case Temperature
Figure 6.Typical Capacitance Vs. Drain-to-Source Voltage
Figure7. Maximum Effective Transient Thermal Impedance, Junction-to-Case
©Silikron Semiconductor CO.,LTD.
2011.11.22 www.silikron.com
Version : 1.0
page 5 of 8
Mechanical Data:
TO220 PACKAGE OUTLINE DIMENSION_GN E
SSPL7509
A
D
D1 b
ФP ФP1
b1
ϴ1 ϴ2
L
D2 ϴ3 A1 ϴ4
Symbol
A A1 b b1 c D D1 D2 E E1 ФP ФP1 e L ϴ1 ϴ2 ϴ3 ϴ4
e
Dimension In Millimeters
Min Nom Max
2.200
1.270
9.900 -
1.300 2.400 1.270 1.370 0.500 15.600 28.700 9.150 10.000 10.160
2.600
1.470
10.100 -
- 3.600
-
1.500
2.54BSC
12.900
13.100
13.300
- 70 - 70 - 30 - 30 -
c E1
Dimension In Inches
Min No.