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SSPL7509 Dataheets PDF



Part Number SSPL7509
Manufacturers Silikron Semiconductor
Logo Silikron Semiconductor
Description N-Channel enhancement mode power field effect transistors
Datasheet SSPL7509 DatasheetSSPL7509 Datasheet (PDF)

Main Product Characteristics: VDSS 75V RDS(on) 7.2mohm(typ.) ID 75A ① Features and Benefits:  Advanced Process Technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  175℃ operating temperature TO220 SSPL7509 Marking and pin Assignment Schematic diagram Description: These N-Channel enhancement mode power field effect transistors are produced using silikron proprie.

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Main Product Characteristics: VDSS 75V RDS(on) 7.2mohm(typ.) ID 75A ① Features and Benefits:  Advanced Process Technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  175℃ operating temperature TO220 SSPL7509 Marking and pin Assignment Schematic diagram Description: These N-Channel enhancement mode power field effect transistors are produced using silikron proprietary MOSFET technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies Absolute max Rating: Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS EAS IAS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current ② Power Dissipation ③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=0.97mH Avalanche Current @ L=0.97mH Operating Junction and Storage Temperature Range Max. 75 ① 70 ① 300 250 1.67 75 ±20 1467 55 -55 to +175 Units A W W/°C V V mJ A °C ©Silikron Semiconductor CO.,LTD. 2011.11.22 www.silikron.com Version : 1.0 page 1 of 8 SSPL7509 Thermal Resistance Symbol RθJC RθJA Characterizes Junction-to-case ③ Junction-to-ambient (t ≤ 10s) ④ Junction-to-Ambient (PCB mounted, steady-state) ④ Typ. — — — Max. 0.6 62 40 Units ℃/W ℃/W ℃/W Electrical Characterizes @TA=25℃ unless otherwise specified Symbol V(BR)DSS RDS(on) VGS(th) IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-to-Source breakdown voltage Static Drain-to-Source on-resistance Gate threshold voltage Drain-to-Source leakage current Gate-to-Source forward leakage Total gate charge Gate-to-Source charge Gate-to-Drain("Miller") charge Turn-on delay time Rise time Turn-Off delay time Fall time Input capacitance Output capacitance Reverse transfer capacitance Min. 75 — — 2 — — — — -100 — — — — — — — — — — Typ. — 7.2 12.8 — 2.29 — — — — 88.4 25.3 33.7 21.1 76.9 56.7 57.2 7796 909 74 Max. — 9 — 4 — 1 50 100 — — — — — — — — — — — Units V mΩ V μA nA nC nS pF Conditions VGS = 0V, ID = 250μA VGS=10V,ID =37.5A TJ = 125°C VDS = VGS, ID = 250μA TJ = 125°C VDS =75V,VGS = 0V TJ = 125°C VGS =20V VGS = -20V ID = 75A, VDS=60V, VGS = 10V VGS=10V, VDD =37.5V, RL=1Ω, RGEN=4.7Ω ID =37.5A VGS = 0V VDS = 25V ƒ =1MHz Source-Drain Ratings and Characteristics Symbol IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. — Typ. — Max. 75 ① — — 300 — 0.91 1.5 — 54.7 — — 124.1 — Units A A V nS nC Conditions MOSFET symbol showing the integral reverse p-n junction diode. IS=75A, VGS=0V, TJ = 25°C TJ = 25°C, IF =75A, di/dt = 100A/μs ©Silikron Semiconductor CO.,LTD. 2011.11.22 www.silikron.com Version : 1.0 page 2 of 8 Test circuits and Waveforms SSPL7509 Switch Waveforms: Notes: ①Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. ②Repetitive rating; pulse width limited by max. junction temperature. ③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal resistance. ④The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C ⑤These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. ©Silikron Semiconductor CO.,LTD. 2011.11.22 www.silikron.com Version : 1.0 page 3 of 8 Typical electrical and thermal characteristics SSPL7509 Figure 1: Typical Output Characteristics Figure 2. Gate to source cut-off voltage Figure 3. Drain-to-Source Breakdown Voltage vs. Temperature Figure 4: Normalized On-Resistance Vs. Case Temperature ©Silikron Semiconductor CO.,LTD. 2011.11.22 www.silikron.com Version : 1.0 page 4 of 8 Typical electrical and thermal characteristics SSPL7509 Figure 5. Maximum Drain Current Vs. Case Temperature Case Temperature Figure 6.Typical Capacitance Vs. Drain-to-Source Voltage Figure7. Maximum Effective Transient Thermal Impedance, Junction-to-Case ©Silikron Semiconductor CO.,LTD. 2011.11.22 www.silikron.com Version : 1.0 page 5 of 8 Mechanical Data: TO220 PACKAGE OUTLINE DIMENSION_GN E SSPL7509 A D D1 b ФP ФP1 b1 ϴ1 ϴ2 L D2 ϴ3 A1 ϴ4 Symbol A A1 b b1 c D D1 D2 E E1 ФP ФP1 e L ϴ1 ϴ2 ϴ3 ϴ4 e Dimension In Millimeters Min Nom Max 2.200 1.270 9.900 - 1.300 2.400 1.270 1.370 0.500 15.600 28.700 9.150 10.000 10.160 2.600 1.470 10.100 - - 3.600 - 1.500 2.54BSC 12.900 13.100 13.300 - 70 - 70 - 30 - 30 - c E1 Dimension In Inches Min No.


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