N-Channel enhancement mode power field effect transistors
Description
Main Product Characteristics:
VDSS
55V
RDS(on) 4.5mohm(typ.)
ID 160A ①
Features and Benefits:
TO220
Advanced Process Technology Special designed for PWM, load switching and
general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175℃ operating temperature
SSPL5505
Marking and pin A...
