N-Channel enhancement mode power field effect transistors
Description
Main Product Characteristics:
VDSS RDS(on)
200V 80mΩ(typ.)
ID 30A
TO220
Features and Benefits:
Advanced MOSFET process technology Special designed for PWM, load switching and
general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175℃ operating temperature
SSPL2090
Marking and pin ...
