Document
Main Product Characteristics
VDSS RDS(on)
200V 0.13Ω(typ.)
ID 18A ①
Features and Benefits
TO-220F
Advanced Process Technology Special designed for PWM, load switching and
general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175℃ operating temperature
SSPL2015F
Marking and Pin Assignment
Schematic Diagram
Description
These N-Channel enhancement mode power field effect transistors are produced using silikron proprietary MOSFET technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.
Absolute Max Rating
Symbol ID @ TC = 25°C ID @ TC = 100°C IDM
PD @TC = 25°C
VDS VGS EAS IAS TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current ② Power Dissipation ③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=4.2mH Avalanche Current @ L=4.2mH Operating Junction and Storage Temperature Range
Max. 18 ① 13 ①
72 75 0.5 200 ± 30 412 14 -55 to +175
Units
A
W W/°C
V V mJ A °C
©Silikron Semiconductor CO.,LTD.
2013.10.16 www.silikron.com
Version : 1.0
page 1 of 8
SSPL2015F
Thermal Resistance
Symbol RθJC
RθJA
Characteristics Junction-to-case ③ Junction-to-ambient (t ≤ 10s) ④ Junction-to-Ambient (PCB mounted, steady-state) ④
Typ. — — —
Max. 2.0 62 40
Units °C/W °C/W °C/W
Electrical Characteristics @TA=25℃ unless otherwise specified
Symbol V(BR)DSS
RDS(on)
VGS(th)
IDSS
IGSS
Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Parameter Drain-to-Source breakdown voltage
Static Drain-to-Source on-resistance
Gate threshold voltage
Drain-to-Source leakage current
Gate-to-Source forward leakage
Total gate charge Gate-to-Source charge Gate-to-Drain("Miller") charge Turn-on delay time Rise time Turn-Off delay time Fall time Input capacitance Output capacitance Reverse transfer capacitance
Min.
200 — —
2 — — — — — — — — — — — — — — —
Typ. — 0.13 0.27 — 2.26 — — — — 27 5.4 11 11 23 22 5.2
1010 240 57
Max. — 0.15 — 4 — 1 50 100
-100 — — — — — — — — — —
Units V Ω V μA nA nC
nS
pF
Conditions VGS = 0V, ID= 250μA VGS=10V,ID =11A TJ = 125°C VDS = VGS, ID = 250μA TJ = 125°C VDS =200V,VGS = 0V TJ = 125°C VGS =20V VGS = -20V ID = 11A, VDS=160V, VGS = 10V
VGS=10V, VDD =100V, RL=9.2Ω,RGEN=2.55Ω ID =11A
VGS = 0V VDS = 25V ƒ = 1MHz
Source-Drain Ratings and Characteristics
Symbol IS
ISM VSD trr Qrr
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min. —
Typ. —
Max. 18 ①
— — 72
— 0.87 1.3 — 128 — — 819 —
Units A
A V nS nC
Conditions MOSFET symbol showing the integral reverse p-n junction diode. IS=11A, VGS=0V, TJ = 25°C TJ = 25°C, IF =11A, di/dt = 100A/μs
©Silikron Semiconductor CO.,LTD.
2013.10.16 www.silikron.com
Version : 1.0
page 2 of 8
Test circuits and Waveforms
EAS Test Circuit
Gate charge test circuit
SSPL2015F
Switching Time Test Circuit
Switching Waveforms
Notes:
①Calculated continuous current based on maximum allowable junction temperature. ②Repetitive rating; pulse width limited by max. junction temperature. ③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance. ④The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
©Silikron Semiconductor CO.,LTD.
2013.10.16 www.silikron.com
Version : 1.0
page 3 of 8
Typical electrical and thermal characteristics
SSPL2015F
Figure 1: Typical Output Characteristics
Figure 2. Gate to source cut-off voltage
Figure 3. Drain-to-Source Breakdown Voltage vs. Temperature
Figure 4: Normalized On-Resistance Vs. Case Temperature
©Silikron Semiconductor CO.,LTD.
2013.10.16 www.silikron.com
Version : 1.0
page 4 of 8
Typical electrical and thermal characteristics
SSPL2015F
Figure 5. Maximum Drain Current Vs. Case Temperature
Case Temperature
Figure 6.Typical Capacitance Vs. Drain-to-Source Voltage
Figure7. Maximum Effective Transient Thermal Impedance, Junction-to-Case
©Silikron Semiconductor CO.,LTD.
2013.10.16 www.silikron.com
Version : 1.0
page 5 of 8
Mechanical Data:
TO220F PACKAGE OUTLINE DIMENSION_GN
SSPL2015F
Symbol
E E1 E2 A A1 A2 A3 c D D1 H1 e ФP ФP1 ФP2 ФP3 L L1 L2 Q1
Q2 b1 b2 b3
Dimension In Millimeters
Min 9.960 9.840 6.800 4.600 2.440 2.660 0.600
15.780 8.970 6.500
Nom 10.160 10.040 7.000 4.700 2.540 2.760 0.700 0.500 15.870 9.170 6.700 2.54BSC
Max 10.360 10.240 7.200 4.800 2.640 2.860 0.800
15.980 9.370 6.800
3.080
3.180
3.280
1.400
1.500
1.600
0.900
1.000
1.100
0.100
0.200
0.300
12.780 2.970 0.830
3o 43o 1.180 0.760
-
12.980 3.170 0.930
5o 45o 1.280 0.800
-
13.180 3.370 1.030
7o 47o 1..