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SSPL2015F Dataheets PDF



Part Number SSPL2015F
Manufacturers Silikron Semiconductor
Logo Silikron Semiconductor
Description N-Channel enhancement mode power field effect transistors
Datasheet SSPL2015F DatasheetSSPL2015F Datasheet (PDF)

Main Product Characteristics VDSS RDS(on) 200V 0.13Ω(typ.) ID 18A ① Features and Benefits TO-220F  Advanced Process Technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  175℃ operating temperature SSPL2015F Marking and Pin Assignment Schematic Diagram Description These N-Channel enhancement mode power field effect transistors are produced using silikron propriet.

  SSPL2015F   SSPL2015F



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Main Product Characteristics VDSS RDS(on) 200V 0.13Ω(typ.) ID 18A ① Features and Benefits TO-220F  Advanced Process Technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  175℃ operating temperature SSPL2015F Marking and Pin Assignment Schematic Diagram Description These N-Channel enhancement mode power field effect transistors are produced using silikron proprietary MOSFET technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies. Absolute Max Rating Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS EAS IAS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current ② Power Dissipation ③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=4.2mH Avalanche Current @ L=4.2mH Operating Junction and Storage Temperature Range Max. 18 ① 13 ① 72 75 0.5 200 ± 30 412 14 -55 to +175 Units A W W/°C V V mJ A °C ©Silikron Semiconductor CO.,LTD. 2013.10.16 www.silikron.com Version : 1.0 page 1 of 8 SSPL2015F Thermal Resistance Symbol RθJC RθJA Characteristics Junction-to-case ③ Junction-to-ambient (t ≤ 10s) ④ Junction-to-Ambient (PCB mounted, steady-state) ④ Typ. — — — Max. 2.0 62 40 Units °C/W °C/W °C/W Electrical Characteristics @TA=25℃ unless otherwise specified Symbol V(BR)DSS RDS(on) VGS(th) IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-to-Source breakdown voltage Static Drain-to-Source on-resistance Gate threshold voltage Drain-to-Source leakage current Gate-to-Source forward leakage Total gate charge Gate-to-Source charge Gate-to-Drain("Miller") charge Turn-on delay time Rise time Turn-Off delay time Fall time Input capacitance Output capacitance Reverse transfer capacitance Min. 200 — — 2 — — — — — — — — — — — — — — — Typ. — 0.13 0.27 — 2.26 — — — — 27 5.4 11 11 23 22 5.2 1010 240 57 Max. — 0.15 — 4 — 1 50 100 -100 — — — — — — — — — — Units V Ω V μA nA nC nS pF Conditions VGS = 0V, ID= 250μA VGS=10V,ID =11A TJ = 125°C VDS = VGS, ID = 250μA TJ = 125°C VDS =200V,VGS = 0V TJ = 125°C VGS =20V VGS = -20V ID = 11A, VDS=160V, VGS = 10V VGS=10V, VDD =100V, RL=9.2Ω,RGEN=2.55Ω ID =11A VGS = 0V VDS = 25V ƒ = 1MHz Source-Drain Ratings and Characteristics Symbol IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. — Typ. — Max. 18 ① — — 72 — 0.87 1.3 — 128 — — 819 — Units A A V nS nC Conditions MOSFET symbol showing the integral reverse p-n junction diode. IS=11A, VGS=0V, TJ = 25°C TJ = 25°C, IF =11A, di/dt = 100A/μs ©Silikron Semiconductor CO.,LTD. 2013.10.16 www.silikron.com Version : 1.0 page 2 of 8 Test circuits and Waveforms EAS Test Circuit Gate charge test circuit SSPL2015F Switching Time Test Circuit Switching Waveforms Notes: ①Calculated continuous current based on maximum allowable junction temperature. ②Repetitive rating; pulse width limited by max. junction temperature. ③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal resistance. ④The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C ©Silikron Semiconductor CO.,LTD. 2013.10.16 www.silikron.com Version : 1.0 page 3 of 8 Typical electrical and thermal characteristics SSPL2015F Figure 1: Typical Output Characteristics Figure 2. Gate to source cut-off voltage Figure 3. Drain-to-Source Breakdown Voltage vs. Temperature Figure 4: Normalized On-Resistance Vs. Case Temperature ©Silikron Semiconductor CO.,LTD. 2013.10.16 www.silikron.com Version : 1.0 page 4 of 8 Typical electrical and thermal characteristics SSPL2015F Figure 5. Maximum Drain Current Vs. Case Temperature Case Temperature Figure 6.Typical Capacitance Vs. Drain-to-Source Voltage Figure7. Maximum Effective Transient Thermal Impedance, Junction-to-Case ©Silikron Semiconductor CO.,LTD. 2013.10.16 www.silikron.com Version : 1.0 page 5 of 8 Mechanical Data: TO220F PACKAGE OUTLINE DIMENSION_GN SSPL2015F Symbol E E1 E2 A A1 A2 A3 c D D1 H1 e ФP ФP1 ФP2 ФP3 L L1 L2 Q1 Q2 b1 b2 b3 Dimension In Millimeters Min 9.960 9.840 6.800 4.600 2.440 2.660 0.600 15.780 8.970 6.500 Nom 10.160 10.040 7.000 4.700 2.540 2.760 0.700 0.500 15.870 9.170 6.700 2.54BSC Max 10.360 10.240 7.200 4.800 2.640 2.860 0.800 15.980 9.370 6.800 3.080 3.180 3.280 1.400 1.500 1.600 0.900 1.000 1.100 0.100 0.200 0.300 12.780 2.970 0.830 3o 43o 1.180 0.760 - 12.980 3.170 0.930 5o 45o 1.280 0.800 - 13.180 3.370 1.030 7o 47o 1..


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