N-Channel enhancement mode power field effect transistors
Description
Main Product Characteristics:
VDSS
100V
RDS(on) 33mohm(typ.)
ID 33A ①
Features and Benefits:
Advanced Process Technology Special designed for PWM, load switching and
general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175℃ operating temperature
TO220
SSPL1042
Marking and pin Ass...