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SSMD60200CT

Silikron Semiconductor

Schottky Barrier Rectifier

SSMD60200CT/SSMD60200CTF Main Product Characteristics: IF VRRM Tj(max) Vf(max) 60A 200V 175℃ 0.95V Features and Bene...


Silikron Semiconductor

SSMD60200CT

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Description
SSMD60200CT/SSMD60200CTF Main Product Characteristics: IF VRRM Tj(max) Vf(max) 60A 200V 175℃ 0.95V Features and Benefits:  High Junction Temperature  High ESD Protection  High Forward & Reverse Surge capability TO220 SSMD60200CT TO220F SSMD60200CTF Schematic Diagram Description: Schottky Barrier Rectifier designed for high frequency switch model power supplies such as adaptors and DC/DC convertors; this product special design for high forward and reverse surge capability Absolute Rating: Symbol Characterizes VRRM Peak Repetitive Reverse Voltage VR(RMS) IF(AV) IFSM RMS Reverse Voltage Average Forward Current Non Repetitive Surge Forward Current(tp=8.3ms sinusoidal) IRRM Peak Repetitive Reverse Surge Current(Tp=2us) TJ Maximum operation Junction Temperature Range Tstg Storage Temperature Range Value 200 140 60 300 0.5 -55~175 -55~175 Unit V V A A A ℃ ℃ Thermal Resistance Symbol Characterizes RθJC Maximum Thermal Resistance Junction To RθJC Case(per leg) TO220 TO220F Value 2 4 Unit ℃/W ℃/W Electrical Characterizes @TA=25℃ unless otherwise specified Symbol Characterizes Min Typ Max Unit VR Reverse Breakdown Voltage 200 V VF Forward Voltage Drop 0.95 V 0.9 IR Leakage Current 0.1 mA 5 Test Condition IR=0.5mA IF=30A, TJ=25℃ IF=30A, TJ=125℃ VR=200V, TJ=25℃ VR=200V, TJ=125℃ ©Silikron Semiconductor CO., LTD. 2012.3.13 www.silikron.com Version: 1.0 page 1of6 I-V Curves: SSMD60200CT/SSMD60200CTF Figure 1:Typical Forward Characteristics Figur...




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