IXTQ102N20T

Preliminary Technical Information TrenchHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH102N20T IXTQ102N20T IXTV102N20T VDSS = ID25 = RDS(on) ≤ 200 102 23 V A mΩ Symbol VDSS VGSM I D25 ILRMS IDM I AS EAS dv/dt PD TJ TJM Tstg T L TSOLD Md F C Weight Test Conditions TJ = 25°C to 175°C Transient T = 25°C C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM T = 25°C C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/ms, VDD ≤ VDSS TJ ≤ 175°C, RG = 2.5 Ω TC = 25°C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Mounting torque (TO-247 & TO-3P) Mounting force (PLUS220) TO-247 TO-3P PLUS220 Maximum Ratings TO-247 (IXTH) 200 V ± 30 V 102 A 75 A 250 A G D S 5A 1.2 J TO-3P (IXTQ) 7 V/ns (TAB) 750 W G -55 ... +175 °C D 175 °C S -55 ... +175 °C 300 °C 260 °C PLUS220 (IXTV) 1.13 / 10 Nm/lb.in. 11..65 / 2.5..14.6 6 5.5 4 N/lb. g g g G D S G = Gate S = Source D = Drain TAB = Drain (TAB) (TAB) Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS = 0 V, ID = 250 μA Characteristic Values Min. Typ. Max. 200 V VGS(th) VDS = VGS, ID = 1 mA 2.5 4.5 V IGSS VGS = ± 20 V, VDS = 0 V ± 200 nA I DSS V =V DS DSS VGS = 0 V TJ = 150°C 5 μA 250 μA RDS(on) VGS = 10 V, ID = 0.5 ID25, Notes 1, 2 18 23 mΩ Features z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect z 175 °C Operating Temperature Advantages z Easy to mount z Space savings z High power density © 2...