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IXGN100N170

IXYS

High Voltage IGBT

High Voltage IGBT IXGN100N170 VCES = IC90 = V ≤CE(sat) 1700V 95A 3.0V Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA ...


IXYS

IXGN100N170

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Description
High Voltage IGBT IXGN100N170 VCES = IC90 = V ≤CE(sat) 1700V 95A 3.0V Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 1Ω Clamped Inductive Load VGE = 15V, VCE = 1250V, TJ = 125°C RG = 10Ω, Non Repetitive TC = 25°C 50/60Hz IISOL ≤ 1mA t = 1min t = 1s Mounting Torque Terminal Connection Torque E Maximum Ratings 1700 1700 ±20 ±30 160 95 600 V V V V A A A ICM = 200 @0.8 VCES 10 A μs 735 -55 ... +150 150 -55 ... +150 2500 3000 1.5/13 1.3/11.5 30 W °C °C °C V~ V~ Nm/lb.in. Nm/lb.in. g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVCES IC = 3mA, VGE = 0V VGE(th) IC = 8mA, VCE = VGE ICES VCE = VCES, VGE = 0V TJ = 125°C IGES VCE = 0V, VGE = ±20V VCE(sat) IC = 100A, VGE = 15V, Note 1 Characteristic Values Min. Typ. Max. 1700 V 3.0 5.0 V 50 μA 3 mA ±200 nA 2.5 3.0 V SOT-227B, miniBLOC E153432 Ec G Ec C G = Gate, C = Collector, E = Emitter c either emitter terminal can be used as Main or Kelvin Emitter Features z Optimized for Low Conduction and Switching Losses z Isolation Voltage 2500V~ z Short Circuit Capability z International Standard Package z High Current Handling Capability Advantages z High Power Density z Low Gate Drive Requirement Applications z Power Inverters z UPS z Motor Drives z SMPS z PFC Circuits z Welding Machines © 201...




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