High Voltage IGBT
High Voltage IGBT
IXGN100N170
VCES = IC90 = V ≤CE(sat)
1700V 95A
3.0V
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM
SSOA ...
Description
High Voltage IGBT
IXGN100N170
VCES = IC90 = V ≤CE(sat)
1700V 95A
3.0V
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM
SSOA (RBSOA)
tsc (SCSOA)
PC TJ TJM Tstg VISOL
Md
Weight
Test Conditions
TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient
TC = 25°C TC = 90°C TC = 25°C, 1ms
VGE = 15V, TVJ = 125°C, RG = 1Ω Clamped Inductive Load
VGE = 15V, VCE = 1250V, TJ = 125°C RG = 10Ω, Non Repetitive
TC = 25°C
50/60Hz IISOL ≤ 1mA
t = 1min t = 1s
Mounting Torque Terminal Connection Torque
E
Maximum Ratings
1700 1700
±20 ±30
160 95
600
V V
V V
A A A
ICM = 200 @0.8 VCES
10
A μs
735
-55 ... +150 150
-55 ... +150
2500 3000
1.5/13 1.3/11.5
30
W
°C °C °C
V~ V~
Nm/lb.in. Nm/lb.in.
g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVCES
IC = 3mA, VGE = 0V
VGE(th)
IC = 8mA, VCE = VGE
ICES VCE = VCES, VGE = 0V TJ = 125°C
IGES VCE = 0V, VGE = ±20V
VCE(sat)
IC = 100A, VGE = 15V, Note 1
Characteristic Values Min. Typ. Max.
1700
V
3.0 5.0 V
50 μA 3 mA
±200 nA
2.5 3.0 V
SOT-227B, miniBLOC E153432
Ec G
Ec C
G = Gate, C = Collector, E = Emitter c either emitter terminal can be used as
Main or Kelvin Emitter
Features
z Optimized for Low Conduction and Switching Losses
z Isolation Voltage 2500V~ z Short Circuit Capability z International Standard Package z High Current Handling Capability
Advantages
z High Power Density z Low Gate Drive Requirement
Applications
z Power Inverters z UPS z Motor Drives z SMPS z PFC Circuits z Welding Machines
© 201...
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