High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
(Electrically Isolated Tab)
IXBF12N300
VCES = IC1...
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS
Transistor
(Electrically Isolated Tab)
IXBF12N300
VCES = IC110 = VCE(sat) ≤
3000V 11A 3.2V
Symbol Test Conditions
VCES VCGR
VGES VGEM
IC25 IC110 ICM
SSOA (RBSOA)
TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient
TC = 25°C TC = 110°C TC = 25°C, 1ms
VGE = 15V, TVJ = 125°C, RG = 20Ω Clamped Inductive Load
PC TJ TJM Tstg TL TSOLD FC VISOL Weight
TC = 25°C
1.6mm (0.062 in.) from Case for 10s Plastic Body for 10 seconds Mounting Force 50/60Hz, 1 Minute
Maximum Ratings
3000 3000
V V
± 20 ± 30
V V
26 A 11 A 98 A
ICM = 98 1500
A V
125 W
-55 ... +150 150
-55 ... +150
°C °C °C
300 °C 260 °C
20..120 / 4.5..27 4000
Nm/lb.in. V~
5g
Symbol Test Conditions
Characteristic Values
(TJ = 25°C Unless Otherwise Specified)
Min.
Typ. Max.
BVCES
IC = 250μA, VGE = 0V
3000
V
VGE(th)
IC = 250μA, VCE = VGE
3.0 5.0 V
ICES
VCE
=
0.8
VCES,
VGE
=
0V Note
2,
TJ
=
125°C
25 μA 1 mA
IGES VCE = 0V, VGE = ± 20V
±100 nA
VCE(sat)
IC = IC90, VGE = 15V, Note 1
2.8 3.2 V
TJ = 125°C
3.5
V
ISOPLUS i4-PakTM
12 5
Isolated Tab
1 = Gate 2 = Emitter
5 = Collector
Features
z Silicon Chip on Direct-Copper Bond (DCB) Substrate
z Isolated Mounting Surface z 4000V~ Electrical Isolation z High Blocking Voltage z High Peak Current Capability z Low Saturation Voltage
Advantages
z Low Gate Drive Requirement z High Power Density
Applications
z Switch-Mode and Resonant-Mode Power Supplies
z Capac...