Document
BCM856BS; BCM856BS/DG
BCM856DS; BCM856DS/DG
PNP/PNP matched double transistors
Rev. 01 — 7 August 2008
Product data sheet
1. Product profile
1.1 General description
PNP/PNP matched double transistors in small Surface-Mounted Device (SMD) plastic packages. The transistors are fully isolated internally.
Table 1. Product overview
Type number
Package
NXP
BCM856BS
SOT363
BCM856BS/DG
BCM856DS
SOT457
BCM856DS/DG
JEITA SC-88
SC-74
Package configuration very small small
1.2 Features
I Current gain matching I Base-emitter voltage matching I Drop-in replacement for standard double transistors I AEC-Q101 qualified
1.3 Applications
I Current mirror I Differential amplifier
1.4 Quick reference data
Table 2. Quick reference data
Symbol Parameter
Per transistor
VCEO IC hFE
collector-emitter voltage collector current DC current gain
Conditions
open base
VCE = −5 V; IC = −2 mA
Min Typ Max Unit
- - −65 V - - −100 mA 200 290 450
NXP Semiconductors
BCM856BS; BCM856DS
PNP/PNP matched double transistors
Table 2. Quick reference data …continued
Symbol Parameter
Conditions
Per device
hFE1/hFE2 hFE matching VBE1−VBE2 VBE matching
VCE = −5 V; IC = −2 mA
VCE = −5 V; IC = −2 mA
Min Typ Max Unit
[1] 0.9
1
-
[2] - - 2 mV
[1] The smaller of the two values is taken as the numerator. [2] The smaller of the two values is subtracted from the larger value.
2. Pinning information
Table 3. Pin 1 2 3 4 5 6
Pinning Description emitter TR1 base TR1 collector TR2 emitter TR2 base TR2 collector TR1
Simplified outline Graphic symbol
654
654
123 001aab555
TR2 TR1
123 sym018
3. Ordering information
Table 4. Ordering information
Type number
Package
Name Description
BCM856BS
SC-88 plastic surface-mounted package; 6 leads
BCM856BS/DG
BCM856DS
SC-74 plastic surface-mounted package (TSOP6); 6 leads
BCM856DS/DG
Version SOT363
SOT457
BCM856BS_BCM856DS_1
Product data sheet
Rev. 01 — 7 August 2008
© NXP B.V. 2008. All rights reserved.
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NXP Semiconductors
BCM856BS; BCM856DS
PNP/PNP matched double transistors
4. Marking
Table 5. Marking codes Type number BCM856BS BCM856BS/DG BCM856DS BCM856DS/DG
[1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China
5. Limiting values
Marking code[1] *BS PB* DS R9
Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Per transistor
VCBO VCEO VEBO IC ICM
Ptot
collector-base voltage collector-emitter voltage emitter-base voltage collector current peak collector current
total power dissipation BCM856BS (SOT363) BCM856BS/DG (SOT363)
open emitter open base open collector
single pulse; tp ≤ 1 ms Tamb ≤ 25 °C
-
[1] -
BCM856DS (SOT457) BCM856DS/DG (SOT457)
[1] -
Per device
Ptot total power dissipation
BCM856BS (SOT363) BCM856BS/DG (SOT363)
Tamb ≤ 25 °C
[1] -
BCM856DS (SOT457) BCM856DS/DG (SOT457)
[1] -
Tj Tamb Tstg
junction temperature ambient temperature storage temperature
−.