Silicon Controlled Rectifiers
MCR265−4 Series
Preferred Device
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed for inverse parallel...
Description
MCR265−4 Series
Preferred Device
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed for inverse parallel SCR output devices for solid state relays, welders, battery chargers, motor controls or applications requiring high surge operation.
Photo Glass Passivated Blocking Junctions for High Temperature
Stability, Center Gate for Uniform Parameters
550 Amperes Surge Capability Blocking Voltage to 800 Volts Device Marking: Logo, Device Type, e.g., MCR265−4, Date Code
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Peak Repetitive Off−State Voltage(1) (TJ = 25 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) MCR265−4 MCR265−6 MCR265−8 MCR265−10
VDRM, VRRM
200 400 600 800
Unit Volts
On-State RMS Current (180° Conduction Angles; TC = 70°C)
Average On-State Current (180° Conduction Angles; TC = 70°C)
Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave, 60 Hz, TJ = 70°C)
Forward Peak Gate Power (Pulse Width ≤ 1.0 μs, TC = 70°C)
Forward Average Gate Power (t = 8.3 ms, TC = 70°C)
Forward Peak Gate Current (Pulse Width ≤ 1.0 μs, TC = 70°C)
Operating Junction Temperature Range
IT(RMS) IT(AV) ITSM
PGM PG(AV)
IGM TJ
55 Amps 35 Amps 550 Amps
20 Watts
0.5 Watt
2.0 Amps
−40 to +125
°C
Storage Temperature Range
Tstg
−40 to
°C
+150
(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative pote...
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