MOSFET
GDSSF8421
GENERAL FEATURES
●N-Channel VDS = 20V,ID = 4.5A RDS(ON) < 40mΩ @ VGS=2.5V RDS(ON) < 30mΩ @ VGS=4.5V
●P-Channe...
Description
GDSSF8421
GENERAL FEATURES
●N-Channel VDS = 20V,ID = 4.5A RDS(ON) < 40mΩ @ VGS=2.5V RDS(ON) < 30mΩ @ VGS=4.5V
●P-Channel VDS = -20V,ID = -3.5A RDS(ON) < 85mΩ @ VGS=-2.5V RDS(ON) < 50mΩ @ VGS=-4.5V
●High Power and current handing capability ●Lead free product is acquired ●Surface Mount Package
Schematic diagram Marking and pin Assignment
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package Reel Size
8421
SSF8421
TSSOP-8
Ø330mm
TSSOP-8 top view
Tape width 12mm
Quantity 3000 units
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
N-Channel P-Channel
Drain-Source Voltage
VDS 20 -20
Gate-Source Voltage
VGS ±12 ±12
Drain Current-Continuous@Current-Pulsed (Note 1)
ID 4.5 -3.5 IDM 30 -30
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
PD TJ,TSTG
1.0 1.0 -55 To 150 -55 To 150
THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note2)
RθJA
N-Ch P-Ch
83 100
Unit V V A A W ℃
℃/W
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Min Typ Max Unit
Suzhou Goodark Electronics Co., Ltd
Version 1.0
GDSSF8421
Drain-Source Breakdown Voltage BVDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Body Leakage Current
IGSS
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
VGS(th)
Drain-Source On-State Resistance RDS(ON)
Forward Transconductance
gFS
SWITCHING CHARACTERISTICS (Note 4)
VGS=0V ID=250μA VGS=0V ID=-250μA...
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