GDSSF2318E

DESCRIPTION The SSF2318E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES ● VDS = 20V,ID =6.5A RDS(ON) < 34mΩ @ VGS=1.8V RDS(ON) < 26mΩ @ VGS=2.5V RDS(ON) < 22mΩ @ VGS=4.5V ESD Rating：2000V HBM ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package GDSSF2318E Schematic diagram Marking and pin Assignment Application ●Battery protection ●Load switch ●Power management SOT-23 top view PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size 2318E SSF2318E SOT-23 Ø330mm Tape width 12mm Quantity 3000 units ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous@ Current-Pulsed (Note 1) ID IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Limit 20 ±8 6.5 30 1.4 -55 To 150 Unit V V A A W ℃ THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 90 ℃/W Suzhou Goodark Electronics Co., Ltd Version 1.0 GDSSF2318E ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter Symbol Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current BVDSS IDSS VGS=0V ID=250μA VDS=20V,VGS=0V Gate-Body Leakage Current ON CHARACTERISTICS (Note 3) VGS=±4.5V,VDS=0V IGSS VGS=±8V,VDS=0V Gate Threshold Vol...