MOSFET
DESCRIPTION
The SSF2302 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with...
Description
DESCRIPTION
The SSF2302 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.
GENERAL FEATURES
● VDS = 20V,ID = 2.4A RDS(ON) < 115mΩ @ VGS=2.5V RDS(ON) < 60mΩ @ VGS=4.5V
● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package
GDSSF230 2
D
G
S
Schematic diagram
3D
2302
G1
2S
Application
●Battery protection ●Load switch ●Power management
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
2302
SSF2302
SOT-23
Ø180mm
SOT-23 top view
Marking and pin Assignment
Tape width 8 mm
Quantity 3000 units
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
ID (25℃)
Drain Current-Continuous@ Current-Pulsed (Note 1)
ID (70℃)
Maximum Power Dissipation Operating Junction and Storage Temperature Range
IDM PD TJ,TSTG
Limit
20 ±8
2.4 1. 7 10
0.9
-55 To 150
Unit
V V A
A
A W ℃
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
140 ℃/W
Suzhou Goodark Electronics Co., Ltd
Version 1.0
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
Zero Gate Voltage Drain Current Gate-Body Leakage Current ON CHARACTERISTICS (Note 3)...
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