MOSFET
Main Product Characteristics:
VDSS
-30 V
RDS(on) 10.6 mΩ(typ.)
ID -12A
Features and Benefits:
Advanced trench MOS...
Description
Main Product Characteristics:
VDSS
-30 V
RDS(on) 10.6 mΩ(typ.)
ID -12A
Features and Benefits:
Advanced trench MOSFET process technology Special designed for PWM, load switching and
general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150℃ operating temperature
GDSSF3611E
Marking and pin Assignment
Schematic diagram
Description:
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications
Absolute max Rating:
Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V① Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Power Dissipation③ Drain-Source Voltage Gate-to-Source Voltage Operating Junction and Storage Temperature Range
Max. -12 -7.4 -48 2 -30 ± 20 -55 to +150
Units
A
W V V °C
Thermal Resistance
Symbol RθJA
Characterizes Junction-to-ambient (t ≤ 10s) ④
Typ. —
Max. 62.5
Units ℃/W
Suzhou Goodark Electronics Co., Ltd
Version 1.0
GDSSF3611E
Electrical Characterizes @TA=25℃ unless otherwise specified
Symbol V(BR)DSS
RDS(on)
VGS(th) IDSS
IGSS
Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Parameter Drain-to-Source breakdown voltage
Static Drain-to-Source on-r...
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