MOSFET
GDSSF2429
DESCRIPTION
The SSF2429 uses advanced trench technology to provide excellent RDS(ON), low gate charge and ope...
Description
GDSSF2429
DESCRIPTION
The SSF2429 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.
GENERAL FEATURES
● VDS = -20V,ID =-5A RDS(ON) < 35mΩ @ VGS=-4.5V RDS(ON) < 48mΩ @ VGS=-2.5V
● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package
D G
S Schematic diagram
Marking and pin Assignment
Application
●Battery protection ●Load switch ●Power management
SOT23-6 top view
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
2429
SSF2429
SOT23-6
Ø180mm
Tape width 8mm
Quantity 3000 units
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous@ Current-Pulsed (Note 1)
ID IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
-20 ±12 -5 -20 1.4 -55 To 150
Unit
V V A A W ℃
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
90 ℃/W
Suzhou Goodark Electronics Co., Ltd
Version 1.0
GDSSF2429
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=-250μA
Min Typ Max Unit
-20 V
Zero Gate Voltage Drain Current Gate-Body Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance DYNAMIC CHA...
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