P-Channel Enhancement Mode MOSFET
PPJX8807
20V P-Channel Enhancement Mode MOSFET
Voltage
-20 V Current -500mA
Features
Low Voltage Drive (1.2V). ...
Description
PPJX8807
20V P-Channel Enhancement Mode MOSFET
Voltage
-20 V Current -500mA
Features
Low Voltage Drive (1.2V). Advanced Trench Process Technology Specially Designed for Load switch, PWM Application, etc. ESD Protected Lead free in compliance with EU RoHS 2011/65/EU
directive. Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case: SOT-563 Package Terminals: Solderable per MIL-STD-750, Method 2026 Approx. Weight: 0.00009 ounces, 0.0026 grams Marking: X07
SOT-563
Unit : inch(mm)
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current
Power Dissipation
Ta=25oC Derate above 25oC
Operating Junction and Storage Temperature Range
Typical Thermal resistance - Junction to Ambient (Note 3)
SYMBOL VDS VGS ID IDM
PD
TJ,TSTG
RθJA
LIMIT -20 +10 -500
-1000 300 2.4 -55~150
417
UNITS V V mA mA
mW mW/ oC
oC
oC/W
March 6,2015-REV.00
Page 1
PPJX8807
Electrical
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER Static Drain-Source Breakdown Voltage Gate Threshold Voltage
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current Gate-Source Leakage Current Dynamic (Note 5) Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Drain-Source Diode...
Similar Datasheet