PJQ2888

PPJQ2888 20V P-Channel Enhancement Mode MOSFET with TVS Diode Voltage -20 V Current -1.5A DFN2020-8L Features  RDS(ON) , [email protected], [email protected]<325mΩ  RDS(ON) , [email protected], [email protected]<420mΩ  RDS(ON) , [email protected], [email protected]<600mΩ  Advanced Trench Process Technology  Specially Designed for Switch Load, PWM Application, etc.  ESD Protected 2KV HBM  Lead free in compliance with EU RoHS 2011/65/EU directive.  Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data  Case : DFN2020-8L Package  Terminals : Solderable per MIL-STD-750, Method 2026  Approx. Weight : 0.00032 ounces, 0.0093 grams  Marking : 888 Maximum Ratings and Thermal Characteristics o (TA=25 C unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 4) Power Dissipation Ta=25oC Derate above 25oC Operating Junction and Storage Temperature Range Typical Thermal resistance - Junction to Ambient (Note 3) SYMBOL VDS VGS ID IDM PD TJ,TSTG RθJA LIMIT -20 +8 -1.5 -6.0 1.25 10 -55~150 100 UNITS V V A A W mW/ oC oC oC/W November 16,2015-REV.03 Page 1 PPJQ2888 Electrical Characteristics o (TA=25 C unless otherwise noted) PARAMETER Static Drain-Source Breakdown Voltage Gate Threshold Voltage Drain-Source On-State Resistance Zero Gate Voltage Drain Current Gate-Source Leakage Current Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capaci...