PJQ1900

PPJQ1900 20V N-Channel Enhancement Mode MOSFET Voltage 20 V Current 1.2 A Features  Low Voltage Drive (1.2V).  Advanced Trench Process Technology  Specially Designed for Switch Load, PWM Application, etc.  ESD Protected  Lead free in compliance with EU RoHS 2011/65/EU directive.  Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data  Case: DFN 3L Package  Terminals: Solderable per MIL-STD-750, Method 2026  Approx. Weight: 0.00004 ounces, 0.0011 grams  Marking: 0 DFN 3L Unit: inch(mm) Maximum Ratings and Thermal Characteristics o (TA=25 C unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current, tp<10us Power Dissipation TA=25oC Tsp=25oC (Note 3) TA=25oC Derate above 25oC Operating Junction and Storage Temperature Range Typical Thermal resistance - Junction to Ambient, t<10s (Note 4) SYMBOL VDS VGS ID IDM PD TJ,TSTG RθJA LIMIT 20 +10 1.2 2.0 4.0 900 7.2 -55~150 139 UNITS V V A A mW mW/ oC oC oC/W August 28,2015-REV.00 Page 1 PPJQ1900 Electrical Characteristics o (TA=25 C unless otherwise noted) PARAMETER Static Drain-Source Breakdown Voltage Gate Threshold Voltage Drain-Source On-State Resistance Zero Gate Voltage Drain Current Gate-Source Leakage Current Dynamic (Note 6) Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time T...