PPJL9830A
60V Dual N-Channel Enhancement Mode MOSFET
Voltage
60 V
Current
4.8 A
SOP-8
Features
RDS(ON), VGS@10V...
PPJL9830A
60V Dual N-Channel Enhancement Mode MOSFET
Voltage
60 V
Current
4.8 A
SOP-8
Features
RDS(ON), VGS@10V,
[email protected]<50mΩ RDS(ON),
[email protected],
[email protected]<60mΩ High switching speed Improved dv/dt capability Low reverse transfer capacitance Lead free in compliance with EU RoHS 2011/65/EU
directive. Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case: SOP-8 package Terminals: Solderable per MIL-STD-750, Method 2026 Approx. Weight: 0.0029 ounces, 0.083 grams Marking: L9830A
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TA=25oC TA=70oC
Pulsed Drain Current (Note 1)
Power Dissipation
TA=25oC TA=70oC
Single Pulse Avalanche Energy (Note 5)
Operating Junction and Storage Temperature Range
Typical Thermal resistance - Junction to Ambient, t≦10s (Note 6)
SYMBOL VDS VGS ID IDM PD EAS
TJ,TSTG
RθJA
LIMIT 60 +20 4.8 3.8 19.2 2.5 1.6 11
-55~150
50
UNITS V V A A W mJ oC
oC/W
July 10,2015-REV.00
Page 1
PPJL9830A
Electrical
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER Static Drain-Source Breakdown Voltage Gate Threshold Voltage Drain-Source On-State Resistance Drain-Source On-State Resistance Zero Gate Voltage Drain Current Gate-Source Leakage Current Dynamic (Note 7) Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance...
