PJL9812

PPJL9812 30V Dual N-Channel Enhancement Mode MOSFET Voltage 30 V Current 6A SOP-8 Features  RDS(ON) , VGS@10V, ID@6A<35mΩ  RDS(ON) , [email protected], ID@4A<40mΩ  RDS(ON) , [email protected], ID@2A<54mΩ  Advanced Trench Process Technology  ESD Protected 2KV HBM  High density cell design for ultra low on-resistance  Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data  Case: SOP-8 package  Terminals: Solderable per MIL-STD-750, Method 2026  Approx. Weight: 0.0029 ounces, 0.083 grams  Marking: L9812 Maximum Ratings and Thermal Characteristics o (TA=25 C unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) Power Dissipation TA=25oC TA=70oC TA=25oC TA=70oC Operating Junction and Storage Temperature Range Typical Thermal resistance - Junction to Ambient, t≦10s (Note 5) SYMBOL VDS VGS ID IDM PD TJ,TSTG RθJA LIMIT 30 +12 6 4.8 24 2 1.3 -55~150 62.5 UNITS V V A A W oC oC/W July 27,2015-REV.00 Page 1 PPJL9812 Electrical Characteristics o (TA=25 C unless otherwise noted) PARAMETER Static Drain-Source Breakdown Voltage Gate Threshold Voltage Drain-Source On-State Resistance Zero Gate Voltage Drain Current Gate-Source Leakage Current Dynamic (Note 6) Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Drain-Source Diode ...