NPT2022

GaN on Silicon General Purpose Amplifier DC - 2 GHz, 48 V, 100 W Features GaN on Si HEMT D-Mode Amplifier Suitable for Linear & Saturated Applications Tunable from DC - 2 GHz 48 V Operation 20 dB Gain @ 900 MHz 60% Drain Efficiency @ 900 MHz 100% RF Tested TO-272 Package RoHS* Compliant and 260°C Reflow Compatible Description The NPT2022 GaN on silicon HEMT D-Mode amplifier optimized for DC - 2 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 100 W in an industry standard plastic package with bolt down flange. The NPT2022 is ideally suited for defense communications, land mobile radio, avionics, wireless infrastructure, ISM applications and VHF/ UHF/L/S-band radar. Built using the SIGANTIC® process - a proprietary GaN-on-Silicon technology. Functional Schematic 2 1 3 NPT2022 Rev. V3 Ordering Information Part Number NPT2022 NPT2022-SMB1 NPT2022-TR0250 Package Bulk Quantity Sample Board Tape & Reel Pin Configuration 1 RFIN / VG RF Input / Gate 2 RFOUT / VD RF Output / Drain 3 Pad1 Ground / Source 1. The exposed pad centered on the package bottom must be connected to RF and DC ground. This path must also provide a low thermal resistance heat path. * Restrictions on Hazardous Substances, compliant to current RoHS EU directive. 1 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.mac...